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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Identification of the dominant electron deep trap in amorphous silicon from ESR and modulated photocurrent measurements: implications for defect models
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Identification of the dominant electron deep trap in amorphous silicon from ESR and modulated photocurrent measurements: implications for defect models

机译：从ESR和调制光电流测量中识别非晶硅中的主要电子深陷阱：对缺陷模型的影响

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摘要

Modulated photocurrent (MPC) measurements in intrinsic a-Si:H reveal a prominent band of electron traps with a thermal emission energy near 0.6 eV. We have identified this defect band by comparing MPC and electron paramagnetic resonance spectra for intrinsic and lightly n-type doped samples over a range of metastable states. These data directly show that the MPC band arises from the neutral charge state of the defects. This identification is also confirmed when the quasi-Fermi level is varied by the application of light bias. Such observations are totally inconsistent with a large population of charged defects in intrinsic samples predicted by recent versions of the defect pool model. Rather, our observations have a natural explanation in terms of a defect relaxation process. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 12]
机译：本征a-Si：H中的调制光电流（MPC）测量显示出电子陷阱的突出带，其热发射能量接近0.6 eV。我们已经通过比较MPC和电子顺磁共振光谱确定了在亚稳态范围内的本征和轻度n型掺杂样品的缺陷带。这些数据直接表明，MPC带是由缺陷的中性电荷状态引起的。当通过施加光偏压改变准费米能级时，也可以确认该识别。此类观察与缺陷池模型的最新版本所预测的内部样本中大量带电缺陷完全不一致。相反，我们的观察对于缺陷松弛过程具有自然的解释。 （C）1998 Elsevier Science B.V.保留所有权利。 [参考：12]

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