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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Microwave plasma assisted sputtering
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Microwave plasma assisted sputtering

机译：微波等离子体辅助溅射

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摘要

Indium tin oxide (ITO) films were prepared on SiO2 and on resin coated glass by microwave assisted sputtering and by magnetron de sputtering using ITO targets. To find out the advantages of the microwave assisted sputtering in comparison to the magnetron sputtering the results of the two methods are compared. At substrate temperatures of 200 degrees C ITO films with a specific resistivity of 133 mu Omega cm at a film thickness of 100 nm could be prepared by microwave assisted sputtering, whereas the smallest obtained specific resistivity of the ITO films by the magnetron process was 212 mu Omega cm. From Hall measurement it can be seen, that the reduced specific resistivity is mainly caused by the increased carrier density. On resin coated glass substrates the specific resistivity of 100 nm thick ITO films could be reduced by the microwave assisted sputtering process from 226 mu Omega cm for the magnetron process to 175 mu Omega cm. Also from Hall measurement this reduction in the specific resistivity is affected by an increase of the carrier mobility. Secondary ion mass spectroscopy analyses show, that the higher specific resistivity in the ITO films on resin coated glass in comparison to the films on SiO, coated glass is at least partly affected by the larger carbon content in the films. This carbon results from the outgassing of the resin. By the microwave assisted sputtering method the optical properties of ITO films could be improved about 1.5% on resin coated glass substrates. For the SiO2 coated substrates the maximum transmittance for the two methods was nearly the same. (C) 1997 Published by Elsevier Science B.V.
机译：通过微波辅助溅射和使用ITO靶的磁控溅射法，在SiO2和涂有树脂的玻璃上制备了氧化铟锡（ITO）膜。为了发现微波辅助溅射与磁控溅射相比的优势，比较了两种方法的结果。在200摄氏度的衬底温度下，可以通过微波辅助溅射制备厚度为100 nm的比电阻为133μΩcm的ITO膜，而通过磁控管工艺获得的ITO膜的最小比电阻为212μ欧米茄厘米。从霍尔测量可以看出，电阻率降低主要是由于载流子密度增加所致。在树脂涂覆的玻璃基板上，可以通过微波辅助溅射工艺将100 nm厚ITO膜的比电阻从磁控管工艺的226μΩcm降低到175μΩcm。同样从霍尔测量中，电阻率的降低受到载流子迁移率的增加的影响。二次离子质谱分析表明，与SiO 2涂覆的玻璃上的膜相比，树脂涂覆的玻璃上的ITO膜中较高的电阻率至少部分受到膜中较大碳含量的影响。碳是由于树脂放气而产生的。通过微波辅助溅射方法，在涂有树脂的玻璃基板上，ITO膜的光学性能可以提高约1.5％。对于SiO2涂覆的基材，两种方法的最大透射率几乎相同。 （C）1997年由Elsevier Science B.V.

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