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Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon

机译:非晶氢化硅中的噪声检测磁共振实验

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摘要

The microscopic origin of electronic noise in intrinsic amorphous hydrogenated silicon (a-Si:H) is studied with noise-detected magnetic resonance (NDMR). This measurement technique, combining conventional noise spectroscopy and electron paramagnetic resonance (EPR), allows the identification of paramagnetic states involved in transport processes underlying electronic noise. The sensitivity of the setup is discussed and shown to be at the fundamental limit within a factor of 2. The NDMR results obtained from Cr-n(+)-i-n(+)-Cr a-Si:H sandwich structures show that holes in the valence band tail play a dominant role in the generation of low-frequency non-thermal noise in intrinsic a-Si:H. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 13]
机译:利用噪声检测磁共振(NDMR)研究了本征非晶氢化硅(a-Si:H)中电子噪声的微观起源。这种测量技术结合了常规噪声光谱学和电子顺磁共振(EPR),可以识别与电子噪声相关的传输过程中涉及的顺磁态。讨论并验证了设置的灵敏度,其基本极限在2倍以内。从Cr-n(+)-in(+)-Cr a-Si:H夹心结构获得的NDMR结果表明,价带尾在本征a-Si:H的低频非热噪声的产生中起主要作用。 (C)2000 Elsevier Science B.V.保留所有权利。 [参考:13]

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