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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Some effects of boron doping in a-SiC:H films prepared by the ECR-CVD method
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Some effects of boron doping in a-SiC:H films prepared by the ECR-CVD method

机译：用ECR-CVD法制备的a-SiC：H薄膜中硼掺杂的一些影响

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摘要

Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance plasma chemical vapour deposition (ECR-CVD) method from a mixture of methane, silane and hydrogen, with diborane as the doping gas. The effect of changes in the percentage of the diborane to reactant gas mixture on the deposition rate, optical bandgap and photoconductivity were investigated. There is evidence from Raman scattering analysis to show that films deposited at a low microwave power of 150 W were all amorphous and the bandgap decreased as the diborane fraction increased whereas films deposited at a high microwave power of 800 W at low diborane fractions are photoconductive and contain microcrystalline silicon inclusions. These films became amorphous as the diborane fraction was increased, while the optical bandgap remains relatively unaffected throughout the entire range of diborane fractions investigated.
机译：使用电子回旋共振等离子体化学气相沉积（ECR-CVD）方法从甲烷，硅烷和氢气的混合物中以乙硼烷作为掺杂气体沉积氢化碳化硅膜（SiC：H）。研究了乙硼烷与反应气体混合物的百分比变化对沉积速率，光学带隙和光电导性的影响。拉曼散射分析表明，在微波功率为150 W时沉积的薄膜都是非晶态，并且随着乙硼烷分数的增加带隙减小，而在微波功率为800 W时在低乙硼烷分数下沉积的薄膜具有光导性和导电性。包含微晶硅夹杂物。随着乙硼烷分数的增加，这些薄膜变为非晶态，而光学带隙在所研究的乙硼烷分数的整个范围内保持相对不受影响。

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