Mechanism of low-temperature crystallization of amorphous silicon by atomic hydrogen anneal

Heya A.; Matsumura H.; Masuda A.

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Mechanism of low-temperature crystallization of amorphous silicon by atomic hydrogen anneal

机译：原子氢退火使非晶硅低温结晶的机理

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Amorphous silicon (a-Si) films prepared by catalytic chemical vapor deposition method using SiH4 and H-2 gas mixtures are crystallized at temperatures <350 degrees C by annealing in atomic hydrogen, (atomic hydrogen anneal: AHA). Atomic hydrogen was generated by catalytic cracking reaction of H-2 gas on a heated tungsten catalyzer. The crystalline fraction of a-Si film sample increased from 0% to several-tens% by AHA, and at the same time, the sample was etched with a rate of several-tens nm/min by AHA. Crystallization and etching by AHA depend on structural properties which are related to potential crystallinity in the initial a-Si film samples. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 8]

机译：通过催化化学气相沉积法使用SiH4和H-2气体混合物制备的非晶硅（a-Si）膜，通过在原子氢中退火，在<350摄氏度的温度下结晶（原子氢退火：AHA）。 H-2气体在加热的钨催化剂上的催化裂化反应产生了原子氢。 A-Si薄膜样品的结晶度通过AHA从0％增加到几十％，同时，通过AHA以几十nm / min的速率蚀刻样品。通过AHA的结晶和蚀刻取决于与初始a-Si膜样品中潜在结晶度有关的结构特性。（C）2000 Elsevier Science B.V.保留所有权利。 [参考：8]

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2000年第1期|共5页
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Heya A.; Matsumura H.; Masuda A.;
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正文语种 eng
中图分类晶体学;
关键词
Cat-cvd method; Tungsten; Films;

机译：Cat-cvd方法;钨;薄膜;

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1. Mechanism of low-temperature crystallization of amorphous silicon by atomic hydrogen anneal [J] . Heya A., Matsumura H., Masuda A. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2000,第Pta1期

机译：原子氢退火使非晶硅低温结晶的机理
2. Monitoring Of Crystallization And The Effect Of The Deposition Rate, Hydrogencontent And Annealing Process On The Crystallization Of Hot Wire Chemical vapor Deposited Hydrogenated Amorphous Silicon (a-si:h) Films [J] . B. Roy, A.H. Mahan, Q. Wang, Thin Solid Films . 2008,第18期

机译：结晶的监测以及沉积速率，氢含量和退火工艺对热丝化学气相沉积氢化非晶硅（a-si：h）薄膜结晶的影响
3. Mechanisms of Aluminium-Induced Crystallization and Layer Exchange Upon Low-Temperature Annealing of Amorphous Si/Polycrystalline Al Bilayers [J] . J. Y. Wang, Z. M. Wang, L. P. H. Jeurgens, Journal of nanoscience and nanotechnology . 2009,第6期

机译：非晶硅/多晶硅Al双层低温退火过程中铝诱导结晶和层交换的机理
4. Hydrogen plasma-enhanced crystallization of amorphous silicon for low-temperature polycrystalline silicon TFT's [C] . Pangal, K., Sturm, Electron Devices Meeting, 1998. IEDM '98 Technical Digest., International . 1998

机译：低温多晶硅TFT非晶硅的氢等离子体增强结晶
5. Hydrogen -plasma -enhanced crystallization of hydrogenated amorphous silicon films: Fundamental mechanisms and applications [D] . Pangal, Kiran. 1999

机译：氢化非晶硅膜的氢等离子体增强结晶：基本机理和应用
6. Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix [O] . Zhenyu Wan, Shujuan Huang, Martin A Green, 2011

机译：碳化硅基体中硅纳米晶的快速热退火和结晶机理研究
7. A study of reactively evaporated amorphous hydrogenated silicon amorphous hydrogenated germanium and recrystallization of amorphous germanium by rapid thermal annealing method. [O] . 1993

机译：用快速热退火法研究反应性蒸发的无定形氢化硅和非晶氢化锗及非晶态锗的再结晶。
8. Annealing characteristics of irradiated hydrogenated amorphous silicon solar cells [R] . Payson, J. S., Abdulaziz, S., Li, Y., 1991

机译：辐照氢化非晶硅太阳能电池的退火特性

Mechanism of low-temperature crystallization of amorphous silicon by atomic hydrogen anneal

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