We present a theoretical study of the optical absorption process of a 9 x 9 Si quantum wire. We calculate the imaginary part of the dielectric constant epsilon (2) and the contribution to epsilon (2) due to three Si atoms located in different positions using the non-orthogonal tight-binding method. From these calculations, we clearly find for the first time that the optical absorption below 3.4 eV tends to occur in the inner region of the 9 x 9 Si quantum wire. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 14]
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机译：我们目前对9 x 9 Si量子线的光吸收过程进行理论研究。我们使用非正交紧束缚方法计算了介电常数ε（2）的虚部以及由于三个Si原子位于不同位置而对ε（2）的贡献。从这些计算中，我们首次清楚地发现，在9 x 9 Si量子线的内部区域往往会发生低于3.4 eV的光吸收。 （C）2001 Elsevier Science B.V.保留所有权利。 [参考：14]
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