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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Mechanical stress studies of amorphous GexSb40-xS60 film
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Mechanical stress studies of amorphous GexSb40-xS60 film

机译：非晶GexSb40-xS60薄膜的机械应力研究

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Mechanical stress in the GexSb40-xS60 film/Si Substrate system has been examined before and after film treatment (illumination and/or annealing). The intrinsic stress in the film was tensile. Stress dependence on the atomic percentage Ge content x shows two extremes. The minimum, at x approximate to 15, has been associated with the so-called 'stress-free' composition. We suggest that the 'stress-free' phase in these films has the same origin as Boolchand's intermediate phase, which is characteristic of chalcogenide glasses. Such a state could be realised with the presence of an extra structural unit, the quasi-tetrahedral S = Sb(S-1/2)(3), seen in these films in addition to the main pyramidal SbS3 and tetrahedral GeS4 units. The maximum at x approximate to 27 is attributed to the well known threshold behaviour of the physical properties of such ternary systems. Illumination of the films results in a decrease of the stress for x > 15 and we propose that this is mainly related to structural reorganization of the edge-shared GeS4 tetrahedra. The stress was increased by the process of annealing. In the Ge-poor region, we suggest that this increase is related to both the SbS3-chain rearrangements and the increased chain number and length due to a transformation of the quasi-tetrahedra into pyramids. The sharp increased in stress at x approximate to 27 is attributed to a rearrangement of the GeS4 edge- and corner-sharing tetrahedra, that initiates a process of nanoscale phase separation upon thermal annealing. The effect of the double treatment, i.e. both annealing and illumination of the layers, is dependent on the order in which they are carried out. (C) 2003 Elsevier B.V. All rights reserved. [References: 24]
机译：在膜处理（照明和/或退火）之前和之后，已经检查了GexSb40-xS60膜/ Si基板系统中的机械应力。膜中的固有应力为拉伸应力。应力对原子百分比Ge含量x的依赖性表现出两个极端。 x的最小值约为15，与所谓的“无压力”成分有关。我们建议这些薄膜中的“无应力”相与Boolchand中间相具有相同的起源，这是硫属化物玻璃的特征。这种状态可以通过存在额外的结构单元，即准四面体S = Sb（S-1 / 2）（3）来实现，在这些薄膜中，除了主要的金字塔形SbS3和四面体GeS4单元以外，还可以看到这种状态。 x处的最大值接近27归因于这种三元系统的物理特性的众所周知的阈值行为。薄膜的照明导致x> 15时应力的降低，我们建议这主要与边缘共享的GeS4四面体的结构重组有关。通过退火过程增加了应力。在Ge贫乏地区，我们认为这种增加与SbS3链重排以及由于准四面体转变为金字塔而增加的链数和链长有关。应力在x处急剧增加到大约27，这归因于GeS4边缘和角共享四面体的重新排列，这会在热退火后引发纳米级相分离过程。双重处理的效果，即层的退火和光照，都取决于它们进行的顺序。 （C）2003 Elsevier B.V.保留所有权利。 [参考：24]

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