...
【24h】

Reversible effects in IR absorption peaks of SiC : H, measured as a function of the temperature

机译:SiC:H的红外吸收峰的可逆效应,随温度的变化进行测量

获取原文
获取原文并翻译 | 示例
           

摘要

We performed an investigation of the variations of the IR absorption peaks as a function of the annealing temperature, T-a, in a-SiC:H alloys. The samples were grown by plasma enhanced chemical vapor deposition using a gas mixture of SiH4 + C2H2. We followed the evolution of several peaks during the thermal cycle (i.e. heating from 25 to 250 degreesC followed by cooling under identical conditions). The analysis of some characteristic parameters of the IR peaks evidences the reversible behavior of the IR absorption as a function of T, cycles. The link with similar reversible resistivity effects is studied. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 17]
机译:我们对a-SiC:H合金中IR吸收峰随退火温度T-a的变化进行了研究。通过使用SiH4 + C2H2的气体混合物通过等离子体增强化学气相沉积来生长样品。我们跟踪了热循环过程中几个峰值的演变情况(即从25摄氏度加热到250摄氏度,然后在相同条件下冷却)。对IR峰的一些特征参数的分析证明了IR吸收的可逆行为是T循环的函数。研究了具有相似可逆电阻率效应的环节。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:17]

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号