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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Light-induced changes in the optical properties of thin films of Ge-S-Bi(Tl, In) chalcogenides
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Light-induced changes in the optical properties of thin films of Ge-S-Bi(Tl, In) chalcogenides

机译：光致Ge-S-Bi（Tl，In）硫族化物薄膜光学性质的变化

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In this paper, we report some results from the study of changes in transmittance, reflectance and optical band gap of thin Ge-S-Bi(Tl, In) thin layers depending on the composition and the conditions of evaporation and illumination. Using two triple, TRfRm and TRbRm methods, the optical constants (n and k), and the thickness (d) of very thin layers from the Ge-S system have been determined to an accuracy of +/-2 nm. R-f, R-b and R-m is the reflection from the film side, from the glass substrate and that of 100 nm thick film deposited on Si substrate, respectively. The calculated values of the optical constants of the ternary chalcogenide films were compared with those obtained from the ellipsometric measurements and some conclusions for their practical applications were done. (C) 2003 Published by Elsevier B.V. [References: 11]
机译：在本文中，我们报告了根据薄Ge-S-Bi（Tl，In）薄层的透射率，反射率和光学带隙变化的研究结果，这些变化取决于蒸发和照明的组成以及条件。使用TRfRm和TRbRm这两种三重方法，已确定Ge-S系统的光学常数（n和k）以及非常薄的层的厚度（d）的精度为+/- 2 nm。 R-f，R-b和R-m分别是从薄膜一侧，玻璃基板和沉积在Si基板上的100 nm厚薄膜的反射。将三元硫属化物膜的光学常数的计算值与通过椭偏测量获得的值进行了比较，并得出了一些实用的结论。 （C）2003年由Elsevier B.V.出版[参考文献：11]

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