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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Comparison of transport and defects properties in hydrogenated polymorphous and amorphous silicon
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Comparison of transport and defects properties in hydrogenated polymorphous and amorphous silicon

机译：氢化多晶和非晶硅中迁移率和缺陷性质的比较

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摘要

Due to its specific microstructure with nanocrystals embedded in an amorphous matrix, polymorphous silicon (pm-Si:H) has been shown to present interesting properties for large area electronic applications. In particular, this material exhibits a lower density of localized gap states and better transport properties than standard amorphous silicon (a-Si:H) after light-soaking. In this paper. we focus our attention on the comparison of electronic transport and defect properties of both materials, The temperature-dependent photocurrent is similar to that of high-quality a-Si:H: it shows thermal quenching in the temperature range around 250 K and becomes temperature-independent at temperatures smaller than about 40 K. Electrically detected magnetic resonance (EDMR) under illumination was performed from 296 K down to 10 K to cover a very wide temperature range wherein the photocurrent is dominated either by free electrons in the band (higher temperatures) or by energy-loss hopping (lower temperatures). The comparison with the EDMR properties of a-Si:H and muc-Si:H assists in the interpretation of the results, thereby clarifying the influence of the incorporated nanocrystals on the recombination physics in pm-Si:H. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 30]
机译：由于其特定的微观结构，其中纳米晶体嵌入在非晶态基质中，因此多晶硅（pm-Si：H）已显示出大面积电子应用中令人感兴趣的特性。特别是，与标准非晶硅（a-Si：H）相比，这种材料在光浸泡后展现出较低的局部间隙态密度和更好的传输性能。在本文中。我们将注意力集中在两种材料的电子传输和缺陷性质的比较上，温度相关的光电流类似于高质量a-Si：H的光电流：它在250 K左右的温度范围内显示出热淬火并变成温度-在小于约40 K的温度下独立。在296 K到10 K的光照下进行电检测磁共振（EDMR），以覆盖非常宽的温度范围，其中光电流由带中的自由电子控制（较高温度）或能量损失跳跃（较低的温度）。与a-Si：H和muc-Si：H的EDMR特性进行比较有助于解释结果，从而阐明掺入的纳米晶体对pm-Si：H中重组物理的影响。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：30]

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