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首页> 外文期刊>Journal of Micromechanics and Microengineering >Through-wafer interconnect technology for silicon
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Through-wafer interconnect technology for silicon

机译：硅晶圆直通互连技术

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摘要

This paper presents a novel method for creating through-wafer interconnects via an anisotropically etched groove in a (100)-silicon wafer. The idea is based on the realization of interconnection lines on the inclined sidewalls of the anisotropically etched grooves, which transfer the metalization to the back side of the wafer without open through-holes. The process itself is compatible with standard semiconductor technology and can be applied at the wafer level resulting in low packaging costs. All post interconnect processes are developed independently and can be added to any IC fabrication process. They are performed at the back side of the wafer at the packaging step, so during this processing the front side of the wafer can be protected from scratches and pollution. The key feature of the method presented is the coating of the anisotropically etched grooves with a polyimide and an electrodeposited photoresist. Further, methods to improve the photoresist uniformity over three-dimensional structures are discussed. Copper interconnects have been realized to show the feasibility of this through-wafer technique for front-to-back electrical interconnections. The thickness of the copper interconnects has been increased by copper electroplating to reduce their electrical resistance further and to increase their mechanical strength.
机译：本文提出了一种通过（100）硅晶片中各向异性刻蚀的凹槽来创建晶片互连的新颖方法。该想法基于在各向异性蚀刻的凹槽的倾斜侧壁上实现互连线，该互连线将金属化层转移到晶片的背面，而没有开放的通孔。该工艺本身与标准半导体技术兼容，可以在晶圆级应用，从而降低了封装成本。所有后互连工艺都是独立开发的，可以添加到任何IC制造工艺中。它们在包装步骤中在晶片的背面进行，因此在此处理过程中，可以保护晶片的正面免受刮擦和污染。所提出的方法的关键特征是用聚酰亚胺和电沉积的光致抗蚀剂涂覆各向异性蚀刻的凹槽。此外，讨论了改善三维结构上光致抗蚀剂均匀性的方法。已经实现了铜互连，以显示该晶圆技术用于前后电气互连的可行性。通过电镀铜增加了铜互连的厚度，以进一步降低其电阻并提高其机械强度。

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