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首页> 外文期刊>Journal of Micromechanics and Microengineering >Sodium contamination of SiO2 caused by anodic bonding
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Sodium contamination of SiO2 caused by anodic bonding

机译：阳极键引起的SiO2的钠污染

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In this paper we present an investigation of sodium contamination Of SiO2 (oxide) during anodic bonding. Sodium contamination can be deleterious to the electrical properties of silicon structures. Silicon wafers with metal-oxide semiconductor (MOS) capacitors were bonded to Coming 7740 (Pyrex) glass wafers. The concentration of mobile ions was measured on capacitors outside and within glass cavities using the triangular voltage sweep method. Using secondary ion mass spectrometry analysis, it was confirmed that the ions were sodium. We found an increase in sodium concentration N-m between 10(10) and 10(13) cm(-2), depending on the oxide location and the geometry of the glass cavity. The gate aluminium of the MOS capacitor was found to partly shield the oxide from contamination, causing a two to five times smaller increase in Nm. Reducing the bonding voltage from 800 to 500 V did not affect the increase in N-m significantly. In contrast, changing the ambient in the bonding chamber from vacuum to 10(20) mbar air, reduced the contamination of capacitors situated outside the glass. A plasma-enhanced chemical vapour deposited Si3N4 film was found to be very beneficial in protecting the capacitors. The Si3N4 prevented sodium contamination of the capacitors situated within the glass cavities, and radically reduced the contamination of the capacitors situated outside the glass. The results suggest that the contaminating sodium originated from the bulk glass. [References: 30]
机译：在本文中，我们对阳极键合过程中SiO2（氧化物）的钠污染进行了研究。钠污染可能对硅结构的电性能有害。将带有金属氧化物半导体（MOS）电容器的硅晶片粘结到Coming 7740（Pyrex）玻璃晶片上。使用三角电压扫描法在玻璃腔体内外的电容器上测量了移动离子的浓度。使用二次离子质谱分析法，确认离子为钠。我们发现钠的浓度N-m在10（10）和10（13）cm（-2）之间增加，这取决于氧化物的位置和玻璃腔的几何形状。发现MOS电容器的栅极铝部分屏蔽了氧化物免受污染，从而使Nm减小了2至5倍。将键合电压从800 V降低到500 V不会明显影响N-m的增加。相反，将键合室中的环境从真空更改为10（20）mbar空气，可以减少位于玻璃外部的电容器的污染。发现等离子体增强化学气相沉积的Si 3 N 4膜对于保护电容器非常有益。 Si 3 N 4防止了位于玻璃腔内的电容器的钠污染，并从根本上减少了位于玻璃外部的电容器的污染。结果表明，污染的钠源自大块玻璃。 [参考：30]

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