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首页> 外文期刊>Journal of Micromechanics and Microengineering >Low stress PECVD - SiN{sub}x layers at high deposition rates using high power and high frequency for MEMS applications
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Low stress PECVD - SiN{sub}x layers at high deposition rates using high power and high frequency for MEMS applications

机译：低应力PECVD-使用高功率和高频率以高沉积速率在MEMS应用中使用SiN {sub} x层

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The paper reports a new fabrication method for low stress SiN{sub}x layers at high deposition rates in a PECVD reactor using high power and high frequency (13.56 MHz) and their MEMS applications. By increasing the deposition power at 600 W in high frequency mode, a decrease of the tensile residual stress to values between 0 and 20 MPa was noticed. Meanwhile, the high power, which promotes a high dissociation of gases, generates a high deposition rate (in the range 250 to 350 nm min{sup}(-1)). In addition, the paper presents the influence of other important parameters that affect the residual stress and deposition rate such as pressure and SiH{sub}4, NH{sub}3 and N{sub}2 flow rates. SiN{sub}x layers fabricated at high power in high frequency mode were successfully used in two classical MEMS applications: fabrication of the masking layer for anisotropic wet etching in KOH solution and fabrication of a low stress cantilever.
机译：本文报道了一种新的制造方法，该方法用于在PECVD反应器中以高沉积和高沉积速率使用高功率和高频率（13.56 MHz）的低应力SiN {sub} x层，以及其MEMS应用。通过在高频模式下以600 W的功率增加沉积功率，可以将拉伸残余应力降低到0到20 MPa之间的值。同时，促进气体高度离解的高功率产生高沉积速率（在250至350 nm min {sup}（-1）范围内）。此外，本文还介绍了影响残余应力和沉积速率的其他重要参数的影响，例如压力和SiH {sub} 4，NH {sub} 3和N {sub} 2流量。在高频模式下以高功率制造的SiN {sub} x层已成功用于两种经典的MEMS应用中：用于KOH溶液中各向异性湿法刻蚀的掩模层的制造和低应力悬臂的制造。

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