Measurement of package-induced stress and thermal zero shift in transfer molded silicon piezoresistive pressure sensors

Nysaether JB.; Liverod A.; Ohlckers P.; Larsen A.

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Measurement of package-induced stress and thermal zero shift in transfer molded silicon piezoresistive pressure sensors

机译：传递模制硅压阻压力传感器中封装引起的应力和热零位移的测量

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The package-induced stress in a transfer molded piezoresistive pressure sensor has been measured by monitoring the individual piezoresistors in the measuring bridge. Based on measurements on six different samples, the induced difference between longitudinal and transversal stress in the sensor diaphragm has been measured as 50 +/- 20 MPa at room temperature. The induced stress creates thermal zero shift and long term drift of the sensor signal. By covering the sensor chip with a low modulus glob top before molding, the stress and thermal zero shift may be considerably reduced. [References: 3]

机译：通过监视测量电桥中的各个压敏电阻，可以测量传递模塑压阻压力传感器中封装引起的应力。基于对六个不同样本的测量，在室温下，传感器膜片中纵向应力和横向应力之间的感应差已测量为50 +/- 20 MPa。感应应力会导致传感器信号产生热零漂移和长期漂移。通过在模制之前用低模量的球形顶部覆盖传感器芯片，可以显着降低应力和热零漂移。 [参考：3]

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《Journal of Micromechanics and Microengineering》 |1998年第2期|共4页
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Nysaether JB.; Liverod A.; Ohlckers P.; Larsen A.;
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1. Measurement of package-induced stress and thermal zero shift in transfer molded silicon piezoresistive pressure sensors [J] . Nysaether JB., Liverod A., Ohlckers P., Journal of Micromechanics and Microengineering . 1998,第2期

机译：传递模制硅压阻压力传感器中封装引起的应力和热零位移的测量
2. Application of aluminum films as temperature sensors for the compensation of output thermal shift of silicon piezoresistive pressure sensors [J] . V. Stankevi, #. #imkevi#ius Sensors and Actuators, A. Physical . 1998,第1a3期

机译：铝膜作为温度传感器在补偿硅压阻压力传感器输出热位移中的应用
3. Application of aluminum films as temperature sensors for the compensation of output thermal shift of silicon piezoresistive pressure sensors [J] . Stankevic V., Simkevicius C. Sensors and Actuators, A. Physical . 1998,第3期

机译：铝膜作为温度传感器在补偿硅压阻压力传感器输出热位移中的应用
4. Internal stress state of TQFP subjected to liquid thermal shock using piezoresistive silicon stress sensor [C] . Alexandra Prisacaru, Yue Sun, Przemysław Jakub Gromala, International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems . 2018

机译：使用压阻硅应力传感器，TQFP在液体热冲击下的内部应力状态
5. Piezoresistive pressure sensor with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon. [D] . Li, Gang. 2005

机译：具有集成放大器的压阻式压力传感器，使用金属感应的横向结晶多晶硅实现。
6. Mechanical Structural Design of a Piezoresistive Pressure Sensor for Low-Pressure Measurement: A Computational Analysis by Increases in the Sensor Sensitivity [O] . Anh Vang Tran, Xianmin Zhang, Benliang Zhu 2018

机译：用于低压测量的压阻压力传感器的机械结构设计：通过传感器灵敏度的提高进行的计算分析
7. Piezoresistive Pressure Sensors: Synergistic Resistance Modulation toward Ultrahighly Sensitive Piezoresistive Pressure Sensors (Adv. Mater. Technol. 4/2020) [O] . Liqian Yuan, Zhongwu Wang, Hongwei Li, 2020

机译：压阻式压力传感器：对超高敏感压阻式压力传感器的协同抗性调制（ADV。Mater。Technol.4/2020）
8. Integrated CMOS circuits for piezoresistive pressure sensors with emphasis on thermal sensitivity shift compensation [R] . Gakkestad, J. 1993

机译：用于压阻式压力传感器的集成CmOs电路，重点是热灵敏度偏移补偿

Measurement of package-induced stress and thermal zero shift in transfer molded silicon piezoresistive pressure sensors

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