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首页> 外文期刊>Journal of Micromechanics and Microengineering >Effects of the etchmask properties on the anisotropy ratio in anisotropic etching of {100} silicon in aqueous KOH
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Effects of the etchmask properties on the anisotropy ratio in anisotropic etching of {100} silicon in aqueous KOH

机译：在KOH水溶液中各向异性刻蚀{100}硅时，刻蚀掩模性能对各向异性比的影响

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摘要

The objective of the present study is to investigate the influence of the etchmask properties on anisotropic etching of silicon in a KOH/H2O solution. The mechanical stress induced in the silicon substrate by an LPCVD-Si3N4 etchmask has been analysed by 3D finite element analysis. It is shown that the rise of the mechanical stress at the edges of etchmask openings is mainly affected by the thickness of the LPCVD-Si3N4 etchmask. The effect of the mechanical stress on the anisotropy ratio was experimentally determined. It has been found that the anisotropy ratio decreases with increasing LPCVD-Si3N4 etchmask thickness. Furthermore the use of SiO2/LPCVD-Si3N4 double-layer etchmasks resulted in rough {111} side wall surfaces and a lower anisotropy ratio. [References: 31]
机译：本研究的目的是研究在KOH / H2O溶液中蚀刻掩模特性对硅各向异性蚀刻的影响。 LPCVD-Si3N4蚀刻掩模在硅基板中引起的机械应力已通过3D有限元分析进行了分析。结果表明，蚀刻掩模开口边缘的机械应力的上升主要受LPCVD-Si3N4蚀刻掩模的厚度影响。实验确定了机械应力对各向异性比的影响。已经发现，随着LPCVD-Si 3 N 4蚀刻掩模厚度的增加，各向异性比减小。此外，使用SiO 2 / LPCVD-Si 3 N 4双层蚀刻掩模导致粗糙的{111}侧壁表面和较低的各向异性比。 [参考：31]

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