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首页> 外文期刊>Journal of Micromechanics and Microengineering >Experimental investigation of an embedded root method for stripping SU-8 photoresist in the UV-LIGA process
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Experimental investigation of an embedded root method for stripping SU-8 photoresist in the UV-LIGA process

机译：嵌入式根法在UV-LIGA工艺中剥离SU-8光刻胶的实验研究

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In much previous research it has been popular to use SU-8 photoresist as a mold for electroplating, facilitating the production of low-cost microelectromechanical systems. However, the thickness of the electroplated structures standing on the substrate could only reach 50 mum or less due to the internal force and deformation of the photoresist in the final stripping process. In order to fabricate thicker structures, an embedded root method has been proposed to consolidate the adhesion of the metal structures to the substrate during the SU-8 removal process. In this paper, an experimental investigation of this method is conducted to characterize the relationship between the root depth, the linewidth and the achievable thickness of the electroplated structures. Some test patterns with embedded roots have been designed and fabricated to estimate the possible size of various structures associated with different depths of niches, which are completely defined through the SiO2 masking and KOH etching processes. Based on the established relationship between the root depth and the geometric sizes, a three-dimensional Ni coil, with a thickness of 200 mum, a width of 80 mum and a root depth of 4 mum, is successfully released by the SU-8 mold, which has a height of 400 mum. This cannot be achieved by the standard SU-8 molding process. The process parameters presented herein may be applied to the fabrication of other thick metal microstructures with similar needs. [References: 15]
机译：在以前的许多研究中，使用SU-8光致抗蚀剂作为电镀模具已变得很普遍，从而促进了低成本微机电系统的生产。然而，由于最终剥离工艺中的内力和光致抗蚀剂的变形，立在基板上的电镀结构的厚度只能达到50μm或更小。为了制造较厚的结构，已经提出了一种嵌入式根方法，以在SU-8去除过程中巩固金属结构对基底的粘附力。在本文中，对该方法进行了实验研究，以表征电镀结构的根部深度，线宽和可达到的厚度之间的关系。已经设计和制造了一些带有嵌入根部的测试图案，以估计与不同壁ni深度相关的各种结构的可能尺寸，这些尺寸完全通过SiO2掩膜和KOH蚀刻工艺确定。基于根深与几何尺寸之间的已建立关系，SU-8模具成功释放了厚度为200μm，宽度为80μm，根深为4μm的三维Ni线圈。高度为400毫米。这不能通过标准的SU-8成型工艺来实现。本文提出的工艺参数可以应用于具有类似需求的其他厚金属微结构的制造。 [参考：15]

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