A novel capacitive accelerometer with an eight-beam-mass structure by self-stop anisotropic etching of (100) silicon

Fei Xiao; Lufeng Che; Bin Xiong; Yuelin Wang; Xiaofeng Zhou; Yufang Li; Youling Lin

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A novel capacitive accelerometer with an eight-beam-mass structure by self-stop anisotropic etching of (100) silicon

机译：通过自停各向异性刻蚀（100）硅而具有八光束质量结构的新型电容式加速度传感器

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This paper reports a novel capacitive sandwich accelerometer with an eight-beam-mass structure fabricated by self-stop anisotropic wet etching of (100) silicon and wafer-level Si-Si bonding. In this structure, eight straight beams symmetrically connect to the corners of the proof mass on both sides. These suspension beams are formed by self-stop anisotropic wet etching of (100) silicon, without heavy boron doping or Si-Si bonding. Through this beam-fabrication approach, the beam thickness can be well controlled and intrinsic stress in the beams is minimized. Accelerometers with different sensitivities can be easily fabricated by varying the thickness of the beams without making any change to the masks. For a device with 17 μm thick beams, the resonance frequency and the quality factor are 696 Hz and 47, respectively. The accelerometer has a sensitivity of 0.35 V g{sup}(-1).

机译：本文报道了一种新颖的电容式三明治式加速度计，其具有八束质量结构，该结构通过对（100）硅进行自停止各向异性湿法刻蚀和晶圆级Si-Si键合制成。在这种结构中，八个直梁对称地连接到检测质量两侧的角上。这些悬架梁是通过对（100）硅进行自停止各向异性湿法刻蚀而形成的，而无需进行重硼掺杂或Si-Si键合。通过这种束制造方法，可以很好地控制束的厚度，并使束中的固有应力最小化。通过改变光束的厚度，而无需对掩模进行任何更改，可以轻松地制造出具有不同灵敏度的加速度计。对于具有17μm厚光束的设备，谐振频率和品质因数分别为696 Hz和47。加速度计的灵敏度为0.35 V g {sup}（-1）。

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《Journal of Micromechanics and Microengineering》 |2008年第7期|共7页
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Fei Xiao; Lufeng Che; Bin Xiong; Yuelin Wang; Xiaofeng Zhou; Yufang Li; Youling Lin;
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1. A novel capacitive accelerometer with an eight-beam-mass structure by self-stop anisotropic etching of (100) silicon [J] . Fei Xiao, Lufeng Che, Bin Xiong, Journal of Micromechanics and Microengineering . 2008,第7期

机译：通过自停各向异性刻蚀（100）硅而具有八光束质量结构的新型电容式加速度传感器
2. Silicon anisotropic etching in alkaline solutions III: On the possibility of spatial structures forming in the course of Si(100) anisotropic etching in KOH and KOH + IPA solutions [J] . Irena Zubel Sensors and Actuators, A. Physical . 2000,第1a2期

机译：碱性溶液中的硅各向异性刻蚀III：关于在KOH和KOH + IPA溶液中Si（100）各向异性刻蚀过程中形成空间结构的可能性
3. Silicon anisotropic etching in alkaline solutions III: On the possibility of spatial structures forming in the course of Si(100) anisotropic etching in KOH and KOH plus IPA solutions [J] . Zubel I. Sensors and Actuators, A. Physical . 2000,第1a2期

机译：碱性溶液中的硅各向异性蚀刻III：关于在KOH和KOH加IPA溶液中Si（100）各向异性蚀刻过程中形成空间结构的可能性
4. Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon [C] . Jovic V., Lamovec J., Smiljanic M. M., 2010 27th International Conference on Microelectronics Proceedings . 2010

机译：通过在{100}取向的硅上进行无掩模湿法各向异性腐蚀{hkl}结构进行微加工
5. Anisotropic fluorocarbon plasma etching of silicon/silicon germanide heterostructures and plasma etching-induced sidewall damage [D] . Ding, Ruhang 2008

机译：硅/硅锗化物异质结构的各向异性碳氟化合物等离子体刻蚀和等离子体刻蚀引起的侧壁损伤
6. A MEMS Micro-g Capacitive Accelerometer Based on Through-Silicon-Wafer-Etching Process [O] . Kang Rao, Xiaoli Wei, Shaolin Zhang, 2019

机译：基于硅晶片蚀刻工艺的MEMS微克电容式加速度计
7. Anisotropic etching of silicon in KOH + Triton X-100 for 45° micromirror applications [O] . Krzysztof P. Rola 2016

机译：在KOH + Triton X-100中对硅进行各向异性蚀刻，用于45°微镜应用

A novel capacitive accelerometer with an eight-beam-mass structure by self-stop anisotropic etching of (100) silicon

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