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首页> 外文期刊>Journal of Micromechanics and Microengineering >Design and fabrication of a highly manufacturable MEMS probe card for high speed testing
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Design and fabrication of a highly manufacturable MEMS probe card for high speed testing

机译：高度可制造的用于高速测试的MEMS探针卡的设计和制造

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摘要

We have designed and fabricated a micro-electro mechanical system (MEMS) probe card, which is suitable for a manufactured product, to achieve a deflection of 50 μm at a force of 1.5 gram (g) and a probe structure height of 720 μm. The cantilever structure consists of a tip and beam of Ni-Co, a bump of Ni and AuSn solder between them. In order to make the probe card compliant, all moving structures such as the tip, beam and bumps were electroplated with nickel, nickel-cobalt and gold solutions. The fabricated MEMS probe card can endure more than 150 μm overdrive and prevent tip damage from particles owing mainly to its high bump height and enhanced high frequency test, putting capacitors between the driving voltage and ground. Based on our experimental results, the average contact force was approximately 1.41 gram force (gf) at 50 μm of deflection and the total path resistance was less than 5 Ω for all pins, while the leakage current was less than 5 nA.
机译：我们设计并制造了一种适用于制成品的微机电系统（MEMS）探针卡，以在1.5克（g）的力和720μm的探针结构高度下实现50μm的挠度。悬臂结构由Ni-Co的尖端和束，在它们之间的Ni和AuSn焊料凸点组成。为了使探针卡兼容，对所有移动的结构（例如尖端，横梁和凸块）进行电镀，均采用镍，镍钴和金溶液。制成的MEMS探针卡可承受超过150μm的过驱动，并防止由于其高凸点高度和增强的高频测试而导致颗粒损坏尖端，从而将电容器置于驱动电压和地之间。根据我们的实验结果，挠度为50μm时，平均接触力约为1.41克力（gf），所有引脚的总路径电阻均小于5Ω，而泄漏电流小于5 nA。

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