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首页> 外文期刊>Journal of Micromechanics and Microengineering >Dual-beam actuation of piezoelectric AlN RF MEMS switches monolithically integrated with AlN contour-mode resonators
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Dual-beam actuation of piezoelectric AlN RF MEMS switches monolithically integrated with AlN contour-mode resonators

机译：与AlN轮廓模式谐振器单片集成的压电AlN RF MEMS开关的双光束驱动

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This work reports on piezoelectric aluminum nitride (AlN) based dual-beam RF MEMS switches that have been monolithically integrated with AlN contour-mode resonators. The dual-beam switch design presented in this paper intrinsically compensates for the residual stress in the deposited films, requires a low actuation voltage (5 to 20 V) and facilitates active pull-off to open the switch and exhibits fast switching times (1 to 2 μs). This work also presents the combined response (cascaded S parameters) of a resonator and a switch that were co-fabricated on the same substrate. The response shows that the resonator can be effectively turned on and off by the switch. A post-CMOS compatible process was used for the co-fabrication of both the switches and the resonators. The single-chip RF solution presented constitutes an unprecedented step forward towards the realization of compact, low-loss and integrated multi-frequency RF front-ends.
机译：这项工作报告了基于压电氮化铝（AlN）的双束RF MEMS开关，该开关已与AlN轮廓模式谐振器单片集成。本文介绍的双光束开关设计可从本质上补偿沉积膜中的残余应力，需要较低的驱动电压（5至20 V），并有助于主动下拉来打开开关，并显示出快速的开关时间（1到2V）。 2μs）。这项工作还提出了在同一基板上共同制造的谐振器和开关的组合响应（级联的S参数）。该响应表明，可以通过开关有效地打开和关闭谐振器。 CMOS后兼容工艺用于开关和谐振器的共同制造。提出的单芯片RF解决方案向实现紧凑，低损耗和集成的多频RF前端迈出了前所未有的一步。

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