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首页> 外文期刊>Journal of Micromechanics and Microengineering >Monolithic integration of a micromachined piezoresistive flow sensor
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Monolithic integration of a micromachined piezoresistive flow sensor

机译：微机械压阻流量传感器的单片集成

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摘要

In this paper, a monolithic integrated piezoresistive flow sensor is presented, which was fabricated with an intermediate CMOS (complementary metal-oxide semiconductor) MEMS (micro electro mechanical system) process compatible with integrated pressure sensors. Four symmetrically arranged silicon diaphragms with piezoresistors on them were used to sense the drag force induced by the input gas flow. A signal conditioning CMOS circuit with a temperature compensation module was designed and fabricated simultaneously on the same chip with an increase of the total chip area by only 35%. An extra step of boron implantation and annealing was inserted into the standard CMOS process to form the piezoresistors. KOH anisotropic etching from the backside and deep reactive ion etching (DRIE) from the front side were combined to realize the silicon diaphragms. The integrated flow sensor was packaged and tested. The testing results indicated that the addition of piezoresistor formation and structure releasing did not significantly change any of the circuitry characteristics. The measured sensor output has a quadratic relation with the input flow rate of the fluid as predicted. The tested resolution of the sensor is less than 0.1 L min~(-1) with a measurement range of 0.1-5 L min~(-1) and the sensitivity is better than 40 mV per (L min~(-1)) with a measurement range of 4-5 L min~(-1). The measured noise floor of the sensor is 21.7 μV rtHz~(-1).
机译：本文提出了一种单片集成压阻式流量传感器，该传感器是通过与集成压力传感器兼容的中间CMOS（互补金属氧化物半导体）MEMS（微机电系统）工艺制成的。四个对称排列的硅膜片上带有压敏电阻，用于检测由输入气体流引起的阻力。具有温度补偿模块的信号调理CMOS电路是在同一芯片上同时设计和制造的，而总芯片面积仅增加了35％。将硼注入和退火的额外步骤插入标准CMOS工艺中以形成压阻器。从背面进行KOH各向异性刻蚀，从正面进行深反应离子刻蚀（DRIE），以实现硅膜片。集成的流量传感器经过包装和测试。测试结果表明，增加压阻器的形成和释放结构不会明显改变任何电路特性。测得的传感器输出与所预测的流体输入流量呈二次关系。传感器的测试分辨率小于0.1 L min〜（-1），测量范围为0.1-5 L min〜（-1），灵敏度优于40 mV per（L min〜（-1））。测量范围为4-5 L min〜（-1）。传感器测得的本底噪声为21.7μVrtHz〜（-1）。

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