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首页> 外文期刊>Journal of Micromechanics and Microengineering >Evaluation of resonating Si cantilevers sputter-deposited with AlN piezoelectric thin films for mass sensing applications
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Evaluation of resonating Si cantilevers sputter-deposited with AlN piezoelectric thin films for mass sensing applications

机译:AlN压电薄膜溅射沉积的Si悬臂共振在质量传感应用中的评估

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摘要

We report on a micro-machined resonator for mass sensing applications which is based on a silicon cantilever excited with a sputter-deposited piezoelectric aluminium nitride (AlN) thin film actuator. An inductively coupled plasma (ICP) cryogenic dry etching process was applied for the micro-machining of the silicon substrate. A shift in resonance frequency was observed, which was proportional to a mass deposited in an e-beam evaporation process on top. We had a mass sensing limit of 5.2 ng. The measurements from the cantilevers of the two arrays revealed a quality factor of 155-298 and a mass sensitivity of 120.34 ng Hz~(-1) for the first array, and a quality factor of 130-137 and a mass sensitivity of 104.38 ng Hz~(-1) for the second array. Furthermore, we managed to fabricate silicon cantilevers, which can be improved for the detection in the picogram range due to a reduction of the geometrical dimensions.
机译:我们报告了一种用于质量传感应用的微机械谐振器,该谐振器基于硅悬臂梁,该悬臂梁是用溅射沉积的压电氮化铝(AlN)薄膜激励器激励的。感应耦合等离子体(ICP)低温干法刻蚀工艺用于硅基板的微加工。观察到共振频率的偏移,该偏移与顶部电子束蒸发过程中沉积的质量成比例。我们的质量感测极限为5.2 ng。两个阵列的悬臂的测量结果显示,第一个阵列的质量因子为155-298,质量灵敏度为120.34 ng Hz〜(-1),质量因子为130-137,质量灵敏度为104.38 ng第二个阵列的Hz〜(-1)此外,我们设法制造了硅悬臂,由于减小了几何尺寸,因此可以改进在皮克范围内的检测。

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