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首页> 外文期刊>Journal of Micromechanics and Microengineering >Oxygen plasma wafer bonding evaluated by the Weibull fracture probability method
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Oxygen plasma wafer bonding evaluated by the Weibull fracture probability method

机译：威布尔断裂概率法评估氧等离子体晶片键合

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In this paper, the oxygen plasma bonding process for fusion bonded silicon wafers has been characterized by a new approach. The mechanical reliability of bonded microstructures was determined using burst tests and Weibull statistic analyses. The fracture characteristic of the bonded system is considered to depend on the stress distribution, the defect distribution and the fracture surface energy at the bond. Using Weibull theory, it is possible to extract the Weibull modulus m and the mean fracture uniform tensile stress per unit length <()over bar>(fc), from the measured data. These quantities make it possible to compare the joint defect distribution and the fracture surface energy at the bonded interface for the processing conditions under observation. These experiments also demonstrate that it is possible to distinguish between these quantities under certain conditions. The fracture probability for different annealing temperatures has been evaluated and found to agree with previous results from surface energy measurements. It is shown that the bond fracture probability increases with annealing times in the range of 10-100 h. The saturated bond strength value is considerably enhanced by oxygen plasma activation prior to bonding. In this study, plasma activations at room temperature and 300 degreesC compare to chemical activations in hot nitric acid annealed at 120 degreesC and 700 degreesC respectively. The tendency to form voids at elevated temperatures, e.g. 300 degreesC. is increased by the oxygen plasma treatment. If the surface energy is considered to be homogeneous over the bonded interface, the Weibull modulus In is an indirect measure of the defect distribution, low m values indicate a wide spectrum of defect types, whereas a high in value narrows the defect distribution responsible for fracture. The Weibull modulus in is shown to be valuable for evaluation of the bonded interface. It is demonstrated that a more scattered defect distribution emerges for in situ bonded wafers as compared to ex situ, and annealing at 300 degreesC for 90 h as compared to room-temperature storage. However. the defect distribution becomes increasingly more narrow with storage time. These variations may be due to either changes in microcracks or void configuration or inhomogeneities in the fracture surface energy over the bond interface. [References: 15]
机译：在本文中，熔融键合硅晶片的氧等离子体键合工艺已采用新方法进行了表征。结合的微观结构的机械可靠性是使用爆破试验和Weibull统计分析确定的。认为键合体系的断裂特性取决于应力分布，缺陷分布和键合处的断裂表面能。使用威布尔理论，可以从测量数据中提取威布尔模量m和每单位长度<（ over bar>（fc））的平均断裂均匀拉伸应力。这些量使得可以在观察到的加工条件下比较接合处的缺陷分布和粘结界面处的断裂表面能。这些实验还表明，在某些条件下可以区分这些数量。已经评估了不同退火温度下的断裂概率，发现与表面能测量的先前结果相符。结果表明，在10-100 h范围内，键断裂的概率随着退火时间的增加而增加。在键合之前，通过氧等离子体的活化，饱和键合强度值大大提高。在这项研究中，室温和300摄氏度下的等离子体活化与分别在120摄氏度和700摄氏度下退火的热硝酸中的化学活化相比。在高温下，例如在高温下形成空隙的趋势。 300℃。通过氧等离子体处理增加。如果认为表面能在键合界面上是均匀的，则威布尔模量In是缺陷分布的间接度量，m值低表示缺陷类型的范围广，而m值高表示导致断裂的缺陷分布变窄。显示威布尔模量对于评估结合界面是有价值的。结果表明，与原位结合的晶片相比，原位键合晶片的缺陷分布更加分散，与室温储存相比，在300摄氏度下退火90小时。然而。随着存储时间的增加，缺陷分布变得越来越狭窄。这些变化可能是由于微裂纹或空隙构型的变化或键界面上断裂表面能的不均匀所致。 [参考：15]

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