Optimum reactive ion etching of x-cut quartz using SF_6 and Ar

M. D. Minnick; G. A. Devenyi; R. N. Kleiman

首页> 外文期刊>Journal of Micromechanics and Microengineering >Optimum reactive ion etching of x-cut quartz using SF_6 and Ar

【24h】

Optimum reactive ion etching of x-cut quartz using SF_6 and Ar

机译：使用SF_6和Ar对x切割石英进行最佳反应性离子刻蚀

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper we investigate the effect of Ar concentration and shadow mask material on the etch rate, surface roughness, and micromask pit density and depth for reactive ion etching (RIE) of x-cut alpha quartz. The ratio of SF_6 to Ar is varied at constant power and pressure to find an optimum Ar concentration for thinning x-cut quartz while maintaining good surface quality. The recipe is used with an STS320 RIE system to produce smooth, through-hole-free, insulating quartz membranes of 7 μm thickness in selective locations on 100 μm thick x-cut quartz wafers. We demonstrate that surface quality is much improved by replacing at least 75% of the SF_6 by volume with Ar, and that for non-inductively coupled plasma RIE the standard mask material nickel is detrimental to surface quality for long etch times.

机译：在本文中，我们研究了Ar浓度和荫罩材料对x切割alpha石英的反应离子蚀刻（RIE）的蚀刻速率，表面粗糙度以及微孔密度和深度的影响。 SF_6与Ar的比例在恒定功率和压力下变化，以找到最佳的Ar浓度，以稀薄x切石英，同时保持良好的表面质量。该配方与STS320 RIE系统一起使用，可在100μm厚的X切石英晶片上的特定位置生产厚度7μm的光滑，无通孔的绝缘石英膜。我们证明，通过用Ar代替体积至少75％的SF_6可以大大改善表面质量，并且对于非电感耦合等离子体RIE，标准的掩模材料镍对于长时间的刻蚀不利于表面质量。

著录项

来源
《Journal of Micromechanics and Microengineering》 |2013年第11期|共6页
作者
M. D. Minnick; G. A. Devenyi; R. N. Kleiman;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类仪器、仪表;
关键词

相似文献

外文文献
中文文献
专利

1. Optimum reactive ion etching of x-cut quartz using SF_6 and Ar [J] . M. D. Minnick, G. A. Devenyi, R. N. Kleiman Journal of Micromechanics and Microengineering . 2013,第11期

机译：使用SF_6和Ar对x切割石英进行最佳反应性离子刻蚀
2. Texturization of ZnO:Al surface by reactive ion etching in SF_6/Ar, CHF_3/ Ar plasma for application in thin film silicon solar cells [J] . Gourab Das, Sukanta Bose, Jayasree R. Sharma, Journal of materials science . 2018,第8期

机译：通过在SF_6 / Ar，CHF_3 / Ar等离子体中进行反应离子刻蚀对ZnO：Al表面进行织构化，以用于薄膜硅太阳能电池
3. Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF_6 and SF_6/Ar plasmas [J] . Meyer T., Girard A., Dain G. Le, Applied Surface Science . 2021,第MAYa30期

机译：在SF_6和SF_6 / AR等离子体中蚀刻无定形GE-SB-SE薄膜期间的表面组成和微掩除效果
4. High Speed Anisotropic Etching of Quartz using SF_6/C_4F_8/Ar/O_2 based chemistry in Inductively Coupled Plasma Reactive Ion Etching system [C] . Abhijat Goyal, Vincent Hood, Srinivas Tadigadapa Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS V . 2006

机译：电感耦合等离子体反应离子刻蚀系统中基于SF_6 / C_4F_8 / Ar / O_2的化学物质对石英的高速各向异性刻蚀
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

机译：在感应耦合等离子体反应器中研究碳氟化合物沉积和蚀刻对硅和二氧化硅蚀刻工艺的影响（使用三氟化甲基），并开发了用于研究等离子体与表面相互作用机理的反应离子束系统。
6. Deep Reactive Ion Etching of Z-Cut Alpha Quartz for MEMS Resonant Devices Fabrication [O] . Bo Li, Cun Li, Yulong Zhao, 2020

机译：用于MEMS谐振装置制造的Z-Cutα石英的深反应离子蚀刻
7. PLASMA PARAMETERS AND COMPOSITION IN CF4 + O2 + Ar AND CHF3 + O2 +Ar IN REACTIVE ION ETCHING PROCESSES [O] . Alexander M. Efremov, Alexander M. Sobolev, Vladimir B. Betelin, 2019

机译：在反应离子蚀刻工艺中CF4 + O 2 + Ar和CHF3 + O2 + AR中的血浆参数和组合物
8. Cl(sub 2)+Ar reactive-ion-beam etching of InGaAlAs for smooth, low- damage definition of asymmetric Fabry-Perot optical transmission modulators [R] . Vawter, G. A. , Fritz, I. J. , Drummond, T. J. , 1996

机译：Cl（sub 2）+ ar反应离子束蚀刻InGaalas，用于不对称Fabry-perot光传输调制器的平滑，低损伤定义

Optimum reactive ion etching of x-cut quartz using SF_6 and Ar

摘要

著录项

相似文献

相关主题

期刊订阅