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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE
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Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE

机译：HVPE在图案化的蓝宝石上直接生长的ELO GaN的光学和结构特性的空间变化

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摘要

A 275 mu m thick GaN layer was directly grown on the SiO2-prepatterned sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The variation of optical and structure characteristics were microscopically identified using spatially resolved cathodeluminescence and micro-Raman spectroscopy in a cross section of the thick film. The D X-0(A) line with the FWHM of 5.1 meV and etch- pit density of 9 x 10(6) cm(-2) illustrated high crystalline quality of the thick GaN epitaxial layer. Optically active regions appeared above the SiO2 masks and disappeared abruptly due to the tapered inversion domains at 210 - 230 mu m thickness. The crystalline quality was improved by increasing the thickness of the GaN/sapphire interface, but the region with a distance of 2 mu m from the top surface revealed relatively low quality due to degenerate surface reconstruction by residual gas reaction. The x-ray rocking curve for the symmetric (0 0 2) and asymmetric (1 0 2) reflections also showed good quality and a small wing tilt of the epitaxial lateral overgrowth (ELO) GaN.
机译：在自制的垂直氢化物气相外延（HVPE）反应器中，在SiO2图案化的蓝宝石上直接生长275μm的GaN层。光学和结构特征的变化在厚膜的横截面中使用空间分辨的阴极发光和显微拉曼光谱进行了微观鉴定。 D X-0（A）线的FWHM为5.1 meV，蚀刻坑密度为9 x 10（6）cm（-2），说明了GaN外延层的高结晶质量。光学活性区出现在SiO2掩膜上方，由于厚度为210-230μm的锥形反型畴而突然消失。通过增加GaN /蓝宝石界面的厚度可以改善晶体质量，但是由于残留气体反应导致的退化表面重构，距顶表面2μm的区域显示出相对较低的质量。对称（0 0 2）和非对称（1 0 2）反射的X射线摇摆曲线也显示出良好的质量，外延横向过生长（ELO）GaN的翼偏小。

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