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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >The growth mechanism of copper films coated on cenosphere particles using magnetron sputtering method
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The growth mechanism of copper films coated on cenosphere particles using magnetron sputtering method

机译：磁控溅射法在空心球粒子上包覆铜膜的生长机理

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The characteristics of copper film coated on cenosphere particles using the magnetron sputtering method were investigated by field emission scanning electron microscopy (FE-SEM), x-ray diffraction (XRD), field emission transmission electron microscopy (TEM) and atomic force microscopy (AFM). The FE-SEM and AFM results show that the grain sizes and root-mean-square roughness values of the copper films increase with the increase in sputtering power or deposition time and the growth of the copper films is a three-dimensional island growth mode. The angular distribution (angle of incidence) and adatom mobility are the two important factors that influence the film growth processes and the film properties. A new film growth model, which is called the variational angle distribution growth model, is proposed to explain the growth mechanism of the copper film coated on cenosphere particles in the paper. The unceasingly variational angular distribution can get rid of the physical shadowing effect of the sputtering deposition and promote a rather smooth film growth. Deposition with high adatom mobility materials creates larger diameter islands than deposition with low adatom mobility ones. Due to the all-round effect, the final distribution of grains shows a rather smooth morphology with low roughness. The XRD results show that the copper film coated on cenospheres is a face centred cubic (fcc) structure and the crystallization of the film sample increases with increasing sputtering power or sputtering time. The high resolution transmission electron microscopy result shows the nano-crystalline copper film with different crystal orientations uniformly coated on amorphous cenosphere particles.
机译：通过场发射扫描电子显微镜（FE-SEM），X射线衍射（XRD），场发射透射电子显微镜（TEM）和原子力显微镜（AFM）研究了使用磁控溅射法在空心球颗粒上涂覆的铜膜的特性。 ）。 FE-SEM和AFM结果表明，铜膜的晶粒尺寸和均方根粗糙度值随溅射功率或沉积时间的增加而增加，并且铜膜的生长是三维岛状生长方式。角分布（入射角）和原子迁移率是影响膜生长过程和膜性能的两个重要因素。提出了一种新的薄膜生长模型，称为变角分布生长模型，用以解释本文中包覆在空心球颗粒上的铜膜的生长机理。不断变化的角度分布可以消除溅射沉积的物理阴影效应，并促进相当平滑的膜生长。高原子迁移率材料的沉积比低原子迁移率材料的沉积产生更大的直径岛。由于全方位的影响，晶粒的最终分布显示出相当光滑的形态和低粗糙度。 XRD结果表明，包覆在空心球上的铜膜为面心立方（fcc）结构，且膜样品的结晶度随溅射功率或溅射时间的增加而增加。高分辨率透射电子显微镜结果显示具有不同晶体取向的纳米晶体铜膜均匀地涂覆在非晶态空心球颗粒上。

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