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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Shaping of silicon crystals for channelling experiments through anisotropic chemical etching
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Shaping of silicon crystals for channelling experiments through anisotropic chemical etching

机译：通过各向异性化学蚀刻进行通道实验的硅晶体成形

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摘要

We present an idea and its development to realize crystals for channelling experiments, which result in significant improvement of the crystal quality with respect to the traditional methods of fabrication. The technique relies on non-conventional usage of the established technique of the anisotropic etching of silicon in micro-machining. Morphological and structural analyses were carried out through electron and scanning-probe microscopy to show that the crystal exhibited flat surfaces with atomically sharp termination, i.e. no appreciable surface damage was induced by the preparation. Thereby, the crystal meets the stringent requirements that are demanded for operation with high-energy beams and in particular for halo collimation in modern hadron colliders.
机译：我们提出了一种思想和其发展，以实现用于通道实验的晶体，与传统的制造方法相比，晶体的质量得到了显着改善。该技术依赖于微加工中硅各向异性蚀刻的既定技术的非常规使用。通过电子和扫描探针显微镜进行形态和结构分析，结果表明该晶体显示出平坦的表面，具有原子上的尖锐末端，即，该制剂未引起明显的表面损伤。因此，该晶体满足了使用高能束操作，特别是现代强子对撞机中的光晕准直所要求的严格要求。

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