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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Investigation on the initial growth of nanocrystalline silicon prepared from hydrogen-diluted SiCl4 at low temperatures
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Investigation on the initial growth of nanocrystalline silicon prepared from hydrogen-diluted SiCl4 at low temperatures

机译：氢稀释的SiCl4低温制备纳米晶硅的初始生长研究

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Ultrathin nanocrystalline silicon films have been fabricated by plasma enhanced chemical vapour deposition from hydrogen-diluted SiCl4 at a low temperature of 250 degrees C. The Raman spectra measurements and high resolution transmission electron microscopy observations reveal that nanocrystalline silicon can be directly grown on an insulator glass substrate at the initial growth of the deposition process. The crystallinity and the grain size increase with the increase in the deposition period. Furthermore, the crystalline fraction as well as the grain size also increase with the decrease in the hydrogen dilution ratio. The I-V characteristic curves measured by a tuned Langmuir probe in the SiCl4/H-2 plasma region at a substrate temperature of 100 degrees C show that silicon films with higher conductivity were deposited on the probe surface in the deposition process. This behaviour is completely different from that observed in the SiH4/H-2 system. It is considered that the formation of nanometre size grains occurs in the gas phase reaction process at the initial stage of film growth, while the growth of grains is mainly governed by the surface reaction process where chlorine and hydrogen play an important role. The direct growth of nanocrystalline Si on the insulator surface at low temperatures using SiCl4/H-2 opens up the possibility of directly fabricating nc-Si/SiO2 or nc-Si/a-SiNx systems at low temperatures.
机译：超薄纳米晶硅膜是通过在250°C的低温下由氢稀释的SiCl4进行等离子体增强化学气相沉积制成的。拉曼光谱测量和高分辨率透射电子显微镜观察表明，纳米晶硅可以直接在绝缘体玻璃上生长在沉积过程的初始生长时沉积衬底。结晶度和晶粒尺寸随着沉积时间的增加而增加。此外，随着氢稀释率的降低，结晶度和晶粒尺寸也增加。在基板温度为100摄氏度的条件下，通过调谐Langmuir探针在SiCl4 / H-2等离子体区域中测得的I-V特性曲线表明，在沉积过程中，具有较高电导率的硅膜沉积在了探针表面上。此行为与SiH4 / H-2系统中观察到的行为完全不同。可以认为，在成膜初期，在气相反应过程中发生了纳米晶粒的形成，而晶粒的生长主要受氯和氢起重要作用的表面反应过程支配。使用SiCl4 / H-2在低温下在绝缘体表面上直接生长纳米晶硅，打开了在低温下直接制造nc-Si / SiO2或nc-Si / a-SiNx系统的可能性。

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