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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Indium zinc oxide films deposited on PET by LF magnetron sputtering
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Indium zinc oxide films deposited on PET by LF magnetron sputtering

机译：LF磁控溅射在PET上沉积的氧化铟锌薄膜

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摘要

Indium zinc oxide (IZO) has attracted much attention recently for use in transparent oxide films compared with the ITO film. We carried out the deposition of IZO on a polyethylene terapthalate (PET) substrate at room temperature by a low-frequency (LF) magnetron sputtering system. These films have amorphous structures with excellent electrical stability, surface uniformity and high optical transmittance. The effects of LF applied voltage and O-2 flow rate were investigated. The electrical and optical properties were studied. At optimal deposition conditions, thin films of IZO with a sheet resistance of 32 Omega/sq and an optical transmittance of over 80% in the visible spectrum range were achieved. The IZO thin films fabricated by this method do not require substrate heating during the film preparation of any additional post-deposition annealing treatment. The experimental results show that films with good qualities of surface morphology, transmittance and electrical conduction can be grown by the LF magnetron sputtering method on PET which is recommendable.
机译：与ITO膜相比，氧化铟锌（IZO）最近在透明氧化物膜中的使用引起了很多关注。我们通过低频（LF）磁控溅射系统在室温下将IZO沉积在聚对苯二甲酸乙二酯（PET）衬底上。这些膜具有无定形结构，具有优异的电稳定性，表面均匀性和高透光率。研究了低频施加电压和O-2流量的影响。研究了电学和光学性质。在最佳沉积条件下，获得了IZO薄膜，其薄层电阻为32 Omega / sq，在可见光谱范围内的透光率超过80％。通过这种方法制造的IZO薄膜在任何其他沉积后退火处理的膜制备过程中均不需要基板加热。实验结果表明，采用低频磁控溅射法在PET上可生长出具有良好的表面形貌，透射率和导电性的薄膜。

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