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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Characterization of C54 titanium silicide thin films by spectroscopy, microscopy and diffraction
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Characterization of C54 titanium silicide thin films by spectroscopy, microscopy and diffraction

机译：C54硅化钛薄膜的光谱，显微镜和衍射表征

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Titanium silicide ( TiSi2) is well known for application as a local interconnect material in complementary metal- oxide semiconductor technology. This paper reports on a comprehensive analysis of titanium silicide thin films by a variety of spectroscopy, diffraction and microscopy techniques. The composition and uniformity of the thin films and the oxygen contamination in the thin films is studied using Auger electron spectroscopy and secondary ion mass spectrometry; these have highlighted the existence of a thin film of uniform and desired composition, with a layer of oxide on the surface. Atomic force microscopy is used to study the surface morphology of the thin films. Microanalysis of the titanium silicide thin films was carried out using cross- sectional transmission electron microscopy; and a silicide - silicon interface which is abrupt and free of amorphous oxide is evident. X- ray diffraction ( Bragg- Brentano and glancing angle), reflection high- energy electron diffraction and selected- area electron diffraction have been used to analyse the orientation of the thin films, and verify the presence of the desired C54 phase. The stress of the thin films is qualitatively studied by forming micro- beams of titanium silicide by bulk- micromachining of silicon, and the curvature of the micro- beams formed confirms tensile stress at the silicide - silicon interface. The thin films are also characterized using ellipsometry and thin film resistivity measurements.
机译：众所周知，硅化钛（TiSi2）在互补金属氧化物半导体技术中用作局部互连材料。本文报道了通过各种光谱学，衍射和显微镜技术对硅化钛薄膜进行的综合分析。使用俄歇电子能谱和二次离子质谱法研究了薄膜的组成和均匀性以及薄膜中的氧污染。这些突出显示了存在均匀且所需组成的薄膜，在其表面上有一层氧化物。原子力显微镜用于研究薄膜的表面形态。使用横截面透射电子显微镜对硅化钛薄膜进行微分析。明显的且无定形氧化物的硅化物-硅界面很明显。 X射线衍射（Bragg-Brentano和掠射角），反射高能电子衍射和选择区域电子衍射已用于分析薄膜的取向，并验证所需C54相的存在。通过硅的整体微细加工形成硅化钛的微束，定性地研究了薄膜的应力，所形成的微束的曲率证实了硅化物-硅界面处的拉伸应力。还使用椭圆偏振和薄膜电阻率测量来表征薄膜。

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