...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >High-quality GaN films grown on surface treated sapphire substrate
【24h】

High-quality GaN films grown on surface treated sapphire substrate

机译：在经表面处理的蓝宝石衬底上生长的高质量GaN膜

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

High-quality GaN films with low dislocation density have been successfully grown on the c-plane specially treated surface of the sapphire substrate. The vapour phase epitaxy starts from the regions with no etched pits where there are some micro-sidesteps to help to nucleate and then spreads laterally with increasing V/III ratio to form continuous GaN films. The full-widths at half-maximum of the x-ray diffraction curves for the GaN films grown on the treated surface of the sapphire substrate in the ( 0002) plane and the ( 10-12) plane are as low as 208.80 arcsec and 320.76 acrsec, respectively, and the etch-pit density of those etched in molten KOH is reduced to 5.5 x 10(5) cm(-2). The surface of the epilayer exhibits atomically smooth, whose root mean square roughness is found to be 0.2863 nm. The epilayer grown on the treated surface of the sapphire substrate exhibits excellent optical quality, in which the yellow luminescence is nearly invisible in the photoluminescence spectrum. Compared with the conventional epitaxial lateral overgrowth technique, the technology is much simpler and the crystallographic tilt can also be greatly decreased.
机译：具有低位错密度的高质量GaN膜已成功地在蓝宝石衬底的c平面经过特殊处理的表面上生长。气相外延从没有蚀刻凹坑的区域开始，在该区域存在一些微台阶以帮助形核，然后随着V / III比的增加而横向扩展以形成连续的GaN膜。在（0002）平面和（10-12）平面中在蓝宝石衬底处理过的表面上生长的GaN膜的x射线衍射曲线的半峰全宽低至208.80 arcsec和320.76 acrsec，并在熔融KOH中蚀刻的那些蚀刻坑密度降低到5.5 x 10（5）cm（-2）。外延层的表面表现出原子光滑性，发现其均方根粗糙度为0.2863 nm。在蓝宝石衬底的经处理表面上生长的外延层显示出优异的光学质量，其中黄色发光在光致发光光谱中几乎不可见。与传统的外延横向过生长技术相比，该技术简单得多，并且晶体学倾斜也可以大大降低。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号