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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Monte Carlo calculation of backscattering factor for Ni-C multilayer system
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Monte Carlo calculation of backscattering factor for Ni-C multilayer system

机译：Ni-C多层系统背向散射因子的蒙特卡罗计算

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摘要

Auger electron spectroscopy (AES) depth profiles using the Ni-MVV (61 eV), C-KLL (272 eV) and NiLMM (848 eV) lines were recorded for a 3 x (Ni(40 nm)/C(28 nm))/Si substrate sample. It was found that the Auger intensities corresponding to pure regions of the depth profile changed with depth. The behaviour of the change was different for the different layers and different Auger lines. The changes can be attributed to the change in the backscattering factor (BF) as the thickness of the sample changes due to the sputter removal. Zommer and Jablonski developed a Monte Carlo (MC) algorithm to calculate the BF for systems with a buried layer. This algorithm was applied to the present case; the intensities of the monitored Auger lines were calculated for the sample with decreasing thickness similarly to the Auger depth profiling. The agreement between the measured and calculated AES depth profiles is excellent. The MC calculation verifies that several layers contribute to the BF and thus the expressions developed for overlayer/substrate systems cannot be used.
机译：记录了使用Ni-MVV（61 eV），C-KLL（272 eV）和NiLMM（848 eV）线的俄歇电子能谱（AES）深度曲线，记录了3倍（Ni（40 nm）/ C（28 nm） ）/ Si基板样品。发现与深度分布的纯区域相对应的俄歇强度随深度而变化。对于不同的层和不同的俄歇线，变化的行为是不同的。由于样品的厚度由于溅射去除而改变，所以改变可以归因于反向散射因子（BF）的改变。 Zommer和Jablonski开发了一种Monte Carlo（MC）算法来计算具有埋层的系统的BF。该算法已应用于当前案例;对于厚度减小的样品，计算出的俄歇线的强度与俄歇深度剖析相似。测量和计算的AES深度分布之间的一致性非常好。 MC计算验证了多层对BF的贡献，因此无法使用针对覆盖层/基材系统开发的表达式。

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