The compensation source in nitrogen doped ZnO

Li L; Shan CX; Li BH; Yao B; Zhang JY; Zhao DX; Zhang ZZ; Shen DZ; Fan XW; Lu YM

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The compensation source in nitrogen doped ZnO

机译：氮掺杂ZnO中的补偿源

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Nitrogen doped zinc oxide (ZnO) films have been prepared by molecular beam epitaxy. The as-grown samples show n-type conduction, but they convert to p-type after being annealed in O-2 atmosphere. X-ray photoelectron spectroscopy reveals that the conversion is mainly caused by the escaping of substituted N molecule (N-2)(O) donors from the films, and photoluminescence spectroscopy confirms the extraction of (N-2)(O). The work shown in this paper reveals experimentally that the main compensation source in nitrogen doped ZnO is (N-2)O donors instead of intrinsic donors or background impurities, and annealing in oxygen may be a promising route to p-ZnO.

机译：通过分子束外延制备了氮掺杂的氧化锌（ZnO）薄膜。刚生长的样品显示n型导电性，但在O-2气氛中退火后会转变为p型。 X射线光电子能谱显示该转化主要是由膜中取代的N分子（N-2）（O）供体逃逸引起的，并且光致发光光谱证实了（N-2）（O）的提取。本文显示的工作通过实验揭示了氮掺杂的ZnO的主要补偿源是（N-2）O供体，而不是本征供体或背景杂质，在氧中退火可能是制备p-ZnO的有前途的途径。

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来源
《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2008年第24期|共4页
作者
Li L; Shan CX; Li BH; Yao B; Zhang JY; Zhao DX; Zhang ZZ; Shen DZ; Fan XW; Lu YM;
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正文语种 eng
中图分类应用物理学;
关键词
MOLECULAR-BEAM EPITAXY; P-TYPE ZNO; NITRIDE THIN-FILMS; ZINC-OXIDE; OPTICAL-PROPERTIES; N-TYPE; HYDROGEN; EMISSION;

机译：分子束外延;P型ZNO;氮化物薄膜;氧化锌;光学性能;N型;氢;排放;

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专利

1. The compensation source in nitrogen doped ZnO [J] . Li L, Shan CX, Li BH, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2008,第24期

机译：氮掺杂ZnO中的补偿源
2. Suppression of compensation from nitrogen and carbon related defects for p-type N-doped ZnO [J] . Kun Tang, Shulin Gu, Shimming Zhu, Applied Physicsletters . 2009,第19期

机译：p型N掺杂ZnO的氮和碳相关缺陷的补偿抑制
3. Nitrogen-Doped ZnO Thin Films Grown on Glass Substrates by Atomic Layer Deposition Using NH_3 as a Doping Source [J] . Doo Hyong Lee, Hee Soo Kim, Seung Jeong Noh Journal of nanoscience and nanotechnology . 2011,第1期

机译：使用NH_3作为掺杂源通过原子层沉积在玻璃基板上生长的氮掺杂ZnO薄膜
4. NITROGEN DOPED ZnO (ZnO:N) THIN FILMS DEPOSITED BY REACTIVE RF MAGNETRON SPUTTERING FOR PEC APPLICATIONS [C] . Sudhakar Shet, Kwang-Soon Ahn, Nuggehalli Ravindra, TMS annual meeting exhibition . 2012

机译：PEC应用反应性射频磁控溅射沉积氮掺杂的ZnO（ZnO：N）薄膜
5. Development of ZnO-based thin film transistors and phosphorus-doped ZnO and (Zn, Mg)O by pulsed laser deposition. [D] . Li, Yuanjie. 2006

机译：通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和（Zn，Mg）O。
6. Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO [O] . Kevin P Musselman, Sebastian Albert-Seifried, Robert L Z Hoye, -1

机译：半导体中ZnO的氮掺杂改善了半导体：ZnO供体：受体界面的激子离解
7. Enhanced magnetism in Cr-doped ZnO nanoparticles with nitrogen co-doping synthesized using sol–gel technique [O] . 2015

机译：溶胶-凝胶法合成氮共掺杂增强Cr掺杂ZnO纳米颗粒的磁性

The compensation source in nitrogen doped ZnO

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