...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Three-energy-level system in asymmetric AlxGa1-xN/GaN double quantum wells
【24h】

Three-energy-level system in asymmetric AlxGa1-xN/GaN double quantum wells

机译：非对称AlxGa1-xN / GaN双量子阱中的三能级系统

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A study on a three-energy-level system in asymmetric AlxGa1-x N/GaN double quantum wells has been performed by solving the Schrodinger and Poisson equations self-consistently. It is found that the resonance between the second subband (the 2 subband) and the 3 subband occurs when the Al composition of the right well is 0.54. The energy separation between the 2 and 3 subbands is a minimum which is up to 145 meV. The absorption coefficient of the intersubband transition (ISBT) between the first and second subbands (the 1-2 ISBT) approximately equals that of the 1-3 ISBT, provided that the Al composition of the right well is 0.54. The wavelengths of the 1-2 and 1-3 ISBTs are 1.55 mu m and 1.31 mu m, respectively. These results suggest promising applications to two-colour devices operating within the optical communication wavelength range.
机译：通过自洽求解Schrodinger和Poisson方程，对不对称AlxGa1-x N / GaN双量子阱中的三能级系统进行了研究。发现当右阱的Al组成为0.54时，第二子带（2子带）和3子带之间发生谐振。 2个子带和3个子带之间的能量间隔最小，最高达145 meV。如果右阱的Al组成为0.54，则第一子带和第二子带（1-2 ISBT）之间的子带间转换（ISBT）的吸收系数近似等于1-3 ISBT的吸收系数。 1-2和1-3 ISBT的波长分别为1.55μm和1.31μm。这些结果表明在光通信波长范围内工作的两种颜色的设备有希望的应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号