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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Structural characterization of mn implanted AlInN
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Structural characterization of mn implanted AlInN

机译：mn植入AlInN的结构表征

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摘要

AlInN/GaN thin films were implanted with Mn ions and subsequently annealed isochronically at 750 and 850 degrees C. X-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques were employed to study the microstructural properties of the implanted/annealed samples. The effect of annealing on implantation-induced strain in thin films has been studied in detail. The strain was found to increase with dose until it reached a saturation value and after that it started decreasing with a further increase in the dose. RBS measurements indicated the atomic diffusion of In, Al, Ga and Mn in implanted samples. The in- and out-diffusion of atoms has been observed after annealing at 750 degrees C and 850 degrees C, respectively. Strong decomposition of the samples took place when annealed at 850 degrees C.
机译：向AlInN / GaN薄膜中注入Mn离子，然后分别在750和850摄氏度下进行等时退火。采用X射线衍射和卢瑟福背散射光谱（RBS）技术研究了注入/退火样品的微观结构特性。已经详细研究了退火对薄膜中注入引起的应变的影响。发现该应变随剂量增加直至达到饱和值，此后随着剂量的进一步增加而开始减小。 RBS测量表明，In，Al，Ga和Mn在注入样品中的原子扩散。分别在750摄氏度和850摄氏度退火后，观察到原子的内扩散和外扩散。样品在850摄氏度退火时发生强烈分解。

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