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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Structural and optical properties of SnS semiconductor films produced by chemical bath deposition
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Structural and optical properties of SnS semiconductor films produced by chemical bath deposition

机译：化学浴沉积制备的SnS半导体膜的结构和光学性质

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摘要

SnS films have been deposited at room temperature by the chemical bath deposition technique. The films have been examined to evaluate their structure, morphology, composition and optical properties. SnS films were polycrystalline with an orthorhombic-herzenbergite structure. The lattice parameters and crystallite size of the sample have been calculated to be a = 4.39 angstrom, b = 11.17 angstrom, c = 3.97 angstrom with a/c = 1.106, and 67 nm, respectively. SnS films have been well crystallized in the form of cylindrical rods and the atomic ratio of Sn to S is 49.8 : 50.2. The optical properties of the sample have been studied using the transmittance and reflectance measurements as a function of wavelength between 190 and 3300 nm. The optical band gap is direct with a value of 1.31 eV. The refractive index and extinction coefficient as a function of wavelength for the film were investigated from the transmittance spectrum by applying the envelope method. The optical parameters of the material such as dielectric constants (n, k, epsilon(1) and epsilon(infinity)), plasma frequency omega(p) and carrier concentration N-opt were also evaluated.
机译：SnS膜已通过化学浴沉积技术在室温下沉积。已经检查了这些膜以评估它们的结构，形态，组成和光学性质。 SnS膜是具有斜方晶钙锌矿结构的多晶。样品的晶格参数和微晶尺寸经计算分别为a = 4.39埃，b = 11.17埃，c = 3.97埃，其中a / c = 1.106和67 nm。 SnS薄膜已经很好地结晶成圆柱形棒状，Sn与S的原子比为49.8：50.2。使用透射率和反射率测量值作为190至3300 nm之间波长的函数，研究了样品的光学特性。光学带隙为直接值1.31 eV。膜的折射率和消光系数随波长的变化，采用包络法从透射光谱中进行了研究。还评估了材料的光学参数，例如介电常数（n，k，ε（无穷大）和ε（无穷大）），等离子体频率ω（p）和载流子浓度N-opt。

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