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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Deposition of low dielectric constant SiOC films by using an atmospheric pressure microplasma jet
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Deposition of low dielectric constant SiOC films by using an atmospheric pressure microplasma jet

机译：大气压微等离子体射流沉积低介电常数SiOC薄膜

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摘要

Low dielectric constant (low-k) SiOC films have been prepared by using an atmospheric pressure microplasma jet (APPJ) from mixtures of tetraethoxysilane (TEOS) and argon (Ar). By decreasing the Ar flow rate from 10 to 2 slm, the dielectric constant of films can be reduced almost linearly to values of about 2.1. Moreover, the film deposition rate increases dramatically to the maximum value of 23 nm s-1, which is much higher than that in a low pressure plasma chemical vapour deposition (LPCVD) system. The leakage current density of films increases with increasing electric field, but has a low value of 1 x 10-8 A cm-2 at 1 x 106 V cm-1, which is similar to the value of samples deposited by LPCVD. It has promising applications as interconnect dielectrics for future generations of advanced integrated circuits (ICs), in addition, demonstrating the feasibility of using APPJ as a substitute for costly and cumbersome low pressure equipment in the production process.
机译：通过使用大气压微等离子体射流（APPJ）从四乙氧基硅烷（TEOS）和氩气（Ar）的混合物中制备了低介电常数（low-k）的SiOC膜。通过将Ar流量从10 slm降低到2 slm，可以将膜的介电常数几乎线性地减小到约2.1的值。而且，膜沉积速率急剧增加到最大值23 nm s-1，这比低压等离子体化学气相沉积（LPCVD）系统中的最大值高得多。薄膜的泄漏电流密度随电场的增加而增加，但在1 x 106 V cm-1时具有1 x 10-8 A cm-2的低值，这与通过LPCVD沉积的样品的值相似。它具有作为下一代高级集成电路（IC）的互连电介质的有前途的应用，此外，还证明了在生产过程中使用APPJ替代昂贵且笨重的低压设备的可行性。

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