• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Investigation of microstructuring CuInGaSe2 thin films with ultrashort laser pulses
【24h】

Investigation of microstructuring CuInGaSe2 thin films with ultrashort laser pulses

机译：超短激光脉冲微结构化CuInGaSe2薄膜的研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Microstructuring of CuInGaSe2 (CIGS) thin films by infrared ultrashort laser pulses is investigated in ambient air. A grating-like surface structure with a periodicity of 630 nm is generated by line scribing of linearly polarized 50 fs lasers. The formation condition of the gratings pattern is experimentally determined in terms of laser energy and scanning speed. It is found that the orientation of these laser-induced gratings is changed with different linear polarizations of the incident light. For circularly polarized light with either left or right circular polarization, however, similar well-defined surface gratings are produced. Both x-ray diffraction and Raman scattering analyses suggest that the lattice structure of the sample's surface is not disturbed by the laser treatments, but the concentration of Ga element can be modified by selecting the pulse width. In comparison with the untreated thin films, the measured optical transmittivity of the structured sample is reduced by 30% in the spectral region of 1-2 mu m, indicating a significant change in the photoelectrical properties of the laser-treated CIGS surfaces.
机译：在环境空气中研究了红外超短激光脉冲对CuInGaSe2（CIGS）薄膜的微结构化。通过线性偏振50 fs激光的划线，可以生成周期为630 nm的光栅状表面结构。光栅图案的形成条件根据激光能量和扫描速度通过实验确定。已经发现，这些激光诱导光栅的取向随着入射光的不同线性偏振而改变。但是，对于具有左或右圆偏振的圆偏振光，会产生类似的轮廓分明的表面光栅。 X射线衍射和拉曼散射分析均表明，样品表面的晶格结构不受激光处理的干扰，但是可以通过选择脉冲宽度来修改Ga元素的浓度。与未处理的薄膜相比，结构化样品的测得光学透射率在1-2微米的光谱范围内降低了30％，这表明经激光处理的CIGS表面的光电性能发生了显着变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号