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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Vertical coupling in multiple stacks quantum-dot semiconductor optical amplifiers
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Vertical coupling in multiple stacks quantum-dot semiconductor optical amplifiers

机译：多堆叠量子点半导体光放大器中的垂直耦合

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The characteristics of vertically coupled multiple stacks quantum-dot (QD) semiconductor optical amplifiers (SOAs) are studied taking into account the effect of carrier coupling between adjacent stacks. We find that QD-SOAs that consist of a few numbers of stacks provide higher optical gain at lower applied current. Our analysis shows that the optical gain of the amplifier can be considerably enhanced due to short tunnelling lifetimes between adjacent stacks. Also, our analysis reveals that short coupling lifetimes can significantly reduce the transparency current and improve the uniformity of the active region since the net coupling rate is a linear function of the injection rate. Long coupling lifetime, on the other hand, produces non-linear and non-uniform coupling rates, which reduce the optical gain and increase the transparency current of the amplifier. We also find that the degradation in the unsaturated optical gain due to long coupling lifetimes is more severe in p-type doped QD-SOA compared with un-doped QD-SOA.
机译：考虑到相邻堆叠之间的载流子耦合效应，研究了垂直耦合的多堆叠量子点（QD）半导体光放大器（SOA）的特性。我们发现，由少量堆栈组成的QD-SOA在较低的施加电流下提供了较高的光学增益。我们的分析表明，由于相邻堆叠之间的隧道寿命短，可以大大提高放大器的光学增益。同样，我们的分析表明，由于净耦合速率是注入速率的线性函数，所以短的耦合寿命可以显着降低透明电流并改善有源区的均匀性。另一方面，长的耦合寿命会产生非线性和不均匀的耦合速率，从而降低光学增益并增加放大器的透明电流。我们还发现，与未掺杂的QD-SOA相比，在p型掺杂的QD-SOA中由于长耦合寿命导致的不饱和光学增益的降低更为严重。

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