Increase in probability of ion capture into the planar channelling regime by a buried oxide layer

V Guidi; A Mazzolari; V V Tikhomirov

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Increase in probability of ion capture into the planar channelling regime by a buried oxide layer

机译：掩埋氧化物层增加了离子捕获到平面沟道区的可能性

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We suggest the use of a buried oxide layer to increase the efficiency of particle capture into the regime of stable channelling motion. At normal incidence, available separation by implanted oxygen structures can be used to increase the probability of proton capture with energies from 5 MeV to about 1 GeV. The fraction of nonchannelled protons can be decreased down to 2% at energies of several hundred MeV in the case of (1 1 0) Si planes. Rutherford backscattering as well as transmitted energy or angular distribution techniques can be used to observe the increase in channelling efficiency.

机译：我们建议使用掩埋的氧化物层来增加颗粒捕获进入稳定通道运动状态的效率。在法向入射时，可以使用通过注入的氧结构进行的有效分离来增加能量从5 MeV到约1 GeV的质子捕获可能性。在（1 1 0）Si平面的情况下，在数百MeV的能量下，非沟道质子的比例可以降低至2％。卢瑟福反向散射以及透射能量或角度分布技术可用于观察通道效率的提高。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2009年第16期|共6页
作者
V Guidi; A Mazzolari; V V Tikhomirov;
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正文语种 eng
中图分类 539C0001;
关键词
proton; fraction; energy;

机译：质子;分数;能量;

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1. Increase in probability of ion capture into the planar channelling regime by a buried oxide layer [J] . V Guidi, A Mazzolari, V V Tikhomirov Journal of Physics, D. Applied Physics: A Europhysics Journal . 2009,第16期

机译：掩埋氧化物层增加了离子捕获到平面沟道区的可能性
2. Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer [J] . Xin Xie, Huilong Zhu, Mengying Zhang, IEICE Electronics Express . 2019,第21期

机译：通过掩埋氧化物层中捕获的电荷引起的辐射增强的通道长度调制
3. Depletion layer formation rate at T≪30 °K in buried channel, metal‐oxide‐semiconductor transistors [J] . Journal of Applied Physics . 1984,第2期

机译：埋沟中金属氧化物半导体晶体管在T≪30°K时的耗尽层形成速率
4. INCREASE OF PROBABILITY OF PARTICLE CAPTURE INTO THE CHANNELING REGIME BY A BURIED OXIDE LAYER [C] . V. GUIDI, A. MAZZOLARI, V. V. TIKHOMIROV Workshop of the INFN Eloisatron Project . 2010

机译：通过掩埋氧化物层将粒子捕获到通道状态的概率增加
5. X-ray characterization of buried layers and interfaces in europium oxide based spin-filter tunnel junctions. [D] . Negusse, Ezana. 2008

机译：X射线表征基于氧化euro的自旋滤波器隧道结中的掩埋层和界面。
6. Mutation of the critical pH-gating residues histidine 231 to glutamate increase open probability of outer membrane protein G in planar lipid bilayer [O] . Mu Yu, Peibei Sun, Yao He, 2013

机译：关键的pH门控残基组氨酸231突变为谷氨酸增加了平面脂质双层中外膜蛋白G的开放可能性
7. A narrow plane cut near the crystal surface increases the probability of capture into the stable channeling motion up to 99 percent [O] . Tikhomirov, V. V. 2007

机译：在晶体表面附近切割的窄平面增加了概率捕获到稳定的通道运动高达99％
8. Deep-Oxide Planar Buried-Channel AlGaAs-GaAs Quantum Well HeterostructureWaveguides with Low Bend Loss [R] . Krames, M. R., Chen, E. I., Crook, A. C., 1995

机译：具有低弯曲损耗的深氧化物平面埋沟alGaas-Gaas量子阱异质结构波导

Increase in probability of ion capture into the planar channelling regime by a buried oxide layer

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