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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Investigation on defect levels in CdZnTe: Al using thermally stimulated current spectroscopy
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Investigation on defect levels in CdZnTe: Al using thermally stimulated current spectroscopy

机译：热激发电流光谱法研究CdZnTe：Al中的缺陷水平

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摘要

Defect levels present in as-grown semi-insulating CdZnTe: Al samples, taken from the top, middle and tail of the same ingot, have been investigated by thermally stimulated current (TSC) spectroscopy. Their trap signatures, particularly the thermal activation energy, capture cross section and concentration, were characterized and discussed, respectively, by fitting the measured TSC spectra with the simultaneous multiple peak analysis method. Furthermore, the deep donor levels E_(DD) from the top, middle and tail were found to be positioned at 0.692 ± 0.659 eV and 0.618 eV below the conduction band, respectively, by fitting the ln(I) versus1/kT plots above room temperature. The Fermi level was positioned at 0.716 ±0.05 eV by fitting the linear plots of the temperature dependence of resistivity, which was pinned by the E_(DD) level near the middle of the band gap, which in turn caused the observed high resistivity in the as-grown CdZnTe: Al ingot.
机译：已通过热激发电流（TSC）光谱法研究了从同一铸锭的顶部，中部和尾部取出的生长中的半绝缘CdZnTe：Al样品中存在的缺陷水平。通过用同时的多峰分析方法拟合测得的TSC光谱，分别表征和讨论了它们的阱特征，特别是热活化能，捕获截面和浓度。此外，通过拟合房间上方的ln（I）与1 / kT图，发现顶部，中部和尾部的深施主能级E_（DD）分别位于导带以下0.692±0.659 eV和0.618 eV。温度。通过拟合电阻率与温度的线性关系图将费米能级定位在0.716±0.05 eV，该线性图由带隙中间附近的E_（DD）能级固定，这反过来导致在导带隙中观察到高电阻率。生长的CdZnTe：铝锭。

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