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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al_2O_3 as gate dielectric
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High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al_2O_3 as gate dielectric

机译：以旋涂Al_2O_3作为栅极电介质的高迁移率和低工作电压ZnGaO和ZnGaLiO晶体管

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摘要

Spin-coated alumina serving as a gate dielectric in thin film transistors shows interesting dielectric properties for low-voltage applications, despite a moderate capacitance. With Ga singly doped and Ga, Li co-doped ZnO as the active channel layers, typical mobilities of 4.7 cm~2 V~(-1) s ~(-1) and 2.1 cm~2 V~(-1) s~(-1) are achieved, respectively. At a given gate bias, the operation current is much smaller than the previously reported values in low-voltage thin film transistors, primarily relying on the giant-capacitive dielectric. The reported devices combine advantages of high mobility, low power consumption, low cost and ease of fabrication. In addition to the transparent nature of both the dielectric and semiconducting active channels, the superior electrical properties of the devices may provide a new avenue for future transparent electronics.
机译：尽管电容适中，但用作低压晶体管应用的栅极电介质的自旋涂层氧化铝仍表现出令人感兴趣的介电性能。以Ga单掺杂和Ga，Li共掺杂ZnO作为有源沟道层，典型迁移率分别为4.7 cm〜2 V〜（-1）s〜（-1）和2.1 cm〜2 V〜（-1）s〜 （-1）分别实现。在给定的栅极偏置下，工作电流要比低压薄膜晶体管中以前报告的值小得多，这主要取决于巨型电容电介质。报告的设备具有高移动性，低功耗，低成本和易于制造的优点。除了电介质和半导体有源通道的透明性外，器件的优越电性能还可以为未来的透明电子学提供新的途径。

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