Characterization of the back surface reflection in InP using femtosecond luminescence up-conversion

Wen XM; Lincoln C; Smith TA; Dao LV; Hannaford P

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Characterization of the back surface reflection in InP using femtosecond luminescence up-conversion

机译：飞秒发光上转换表征InP中的背面反射

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In this investigation we study the behaviour of the emission from back surface reflection in InP using a femtosecond resolution up-conversion technique. The contributions from the direct emission and the back surface reflection are well distinguished. The experiments show unambiguously that the secondary rise in the time evolution of the luminescence originates from back surface reflection. Furthermore the emission from back surface reflection is used for a second excitation in the semiconductor nanostructures.

机译：在这项研究中，我们使用飞秒分辨率上转换技术研究了InP中背面反射的发射行为。来自直接发射和背面反射的贡献非常明显。实验清楚地表明，发光时间演变中的二次上升源于背面反射。此外，来自背面反射的发射用于半导体纳米结构中的第二激发。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2009年第4期|共5页
作者
Wen XM; Lincoln C; Smith TA; Dao LV; Hannaford P;
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正文语种 eng
中图分类应用物理学;
关键词
SELF-INDUCED-TRANSPARENCY; WHITE-LIGHT CONTINUUM; ELECTRON RELAXATION; CONDENSED MEDIA; QUANTUM DOTS; GENERATION; SPECTROSCOPY; SPECTRA; INAS; GAAS;

机译：自感应透明;白光连续性;电子弛豫;凝聚介质;量子点;生成;光谱学;光谱;INAS;GAAS;

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1. Characterization of the back surface reflection in InP using femtosecond luminescence up-conversion [J] . Wen XM, Lincoln C, Smith TA, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2009,第4期

机译：飞秒发光上转换表征InP中的背面反射
2. Optimal spectral phase control of femtosecond laser-induced up-conversion luminescence in Sm~(3+):NaYF_4 glass [J] . Frontiers of physics . 2020,第2期

机译：飞秒激光在Sm〜（3 +）：NaYF_4玻璃中的上转换发光的最佳光谱相位控制
3. Tuning up-conversion luminescence in Er~(3+)-doped glass ceramic by phase-shaped femtosecond laser field with optimal feedback control [J] . Deng Lian-Zhong, Yao Yun-Hua, Deng Li, Frontiers of physics . 2019,第1期

机译：相位反馈飞秒激光场优化反馈控制调谐掺Er〜（3+）玻璃陶瓷的上转换发光
4. Magnetoluminescence characterization of lattice matched n-type InGaAs/InAlAs/InP MQWs on InP [C] . Eric D. Jones, Sandia National Labs., Albuquerque, Physics and Simulation of Optoelectronic Devices V . 1997

机译：InP上晶格匹配n型InGaAs / InAlAs / InP MQW的磁致发光特性
5. UV reflection and luminescence for characterization of cure in epoxies, polyimides and composites. [D] . Yu, Jae-Woong. 1994

机译：紫外反射和发光用于表征环氧树脂，聚酰亚胺和复合材料中的固化。
6. Chemical synthesis and optical structural and surface characterization of InP-In2O3 quantum dots [O] . D.A. Granada-Ramirez, J.S. Arias-Cerón, M. Pérez-González, -1

机译：InP-In2O3量子点的化学合成以及光学结构和表面表征
7. Special Issue: Characterization of Crystal Growing Surface by "In-Situ Photon-Probing". In Situ Characterization of GaAs and InP Surfaces by Surface Photo-Absorption during Chloride Atomic Layer Epitaxy. [O] . Kenichi NISHI, Akira USUI, Hiroyuki SAKAKI 1993

机译：特别问题：“原位光子探测”晶体生长表面的表征。在氯化物原子层外延表面光吸收的GaAs和InP表面的原位表征。
8. Etude des Surfaces d'InP et des Interfaces InP Isolant Par Photoluminescence (Photoluminescence Study of InP Surfaces and InP-Insulator Interfaces) [R] . Bourdoucen, H. 1987

机译：Etude des surfaces d'Inp et des Interfaces Inp Isolant par photoluminescence（Inp表面和Inp绝缘体界面的光致发光研究）

Characterization of the back surface reflection in InP using femtosecond luminescence up-conversion

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