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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Photoelectric properties of the undoped GaN/AlN interlayer/high purity Si(111)interface
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Photoelectric properties of the undoped GaN/AlN interlayer/high purity Si(111)interface

机译：未掺杂的GaN / AlN中间层/高纯度Si（111）界面的光电性能

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摘要

AlInN/GaN heterostructures with indium contents between 20% and 35% were grown bymetal organic vapour phase epitaxy on high purity silicon (1 1 1) substrates. The sampleswere investigated by photovoltage (PV) spectroscopy whereby the individual layers weredistinguished by their different absorption edges.The near band-edge transitions of GaN and of Si demonstrate the existence of spacecharge regions within the GaN layers and the Si substrate. In sandwich geometry the Sisubstrate significantly influences the PV spectra which are strongly quenched by additional690 nm laser light illumination. The intensity dependence and the saturation behaviour ofquenching suggest a recharging of Si- and-GaN-related interface defects causing a collapseof the corresponding PV signals in the space charge region.From additional scanning surface potential microscopy measurements in bevelconfiguration further evidence of the existence of different space charge regions at theGaN/AlN/Si and AlInN/GaN interfaces is obtained.The properties of the Si/seed layer/GaN heterostructure are discussed in terms of a p-typeSi-type GaN layer interface generated by diffusion of Si atoms into GaN and of Ga or Alatoms into the Si substrate.
机译：铟含量在20％至35％之间的AlInN / GaN异质结构通过金属有机气相外延生长在高纯度硅（1 1 1）衬底上。通过光电压（PV）光谱对样品进行了研究，从而使各个层的吸收边缘不同.GaN和Si的近能带边缘跃迁表明GaN层和Si衬底内存在空间电荷区。在夹层结构中，硅基板会显着影响PV光谱，PV光谱会被另外的690 nm激光照射强烈淬灭。强度依赖性和淬火的饱和行为表明，与硅和氮化镓相关的界面缺陷会再充电，从而导致空间电荷区域中相应的PV信号崩溃。从斜面配置中的附加扫描表面电势显微镜测量进一步证明存在不同的获得了GaN / AlN / Si和AlInN / GaN界面上的空间电荷区域。讨论了通过Si原子扩散产生的p型Si / n型GaN层界面，讨论了Si /种子层/ GaN异质结构的性质。氮化镓和镓或铝原子进入硅衬底。

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