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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling
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Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling

机译:操纵效应对离子通道在AlGaInN / GaN异质结构中应变检测的影响

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摘要

Ion steering effects in the interface of heterostructures can strongly influence the shape and position of angular channelling scans leading to considerable error in the determination of strain by ion channelling. As an example, this paper presents channelling measurements on a near-lattice-matched AlGaInN/GaN heterostructure which show no shift between the angular scans from the quaternary layer and the underlying GaN substrate although high resolution x-ray diffraction data confirm the presence of strain in the layer. Such 'anomalous' behaviour was studied by means of Monte Carlo simulations for nitride ternary and quaternary films in the whole composition range. The simulations show that the thickness, magnitude of the distortion of the strained lattice and energy of the probing beam are critical parameters controlling the impact of steering. Three composition/ strain regions were established for a typical beam of 2 MeV alpha particles corresponding to different intensities of the steering potential and in which strain measurements by ion channelling are (a) correct, (b) possible but require corrections and (c) not possible due to steering effects.
机译:异质结构界面中的离子操纵效应会严重影响角通道扫描的形状和位置,从而导致在确定离子通道应变时出现相当大的误差。例如,本文介绍了在接近晶格匹配的AlGaInN / GaN异质结构上的沟道测量结果,尽管高分辨率x射线衍射数据证实了应变的存在,但在四元层和下面的GaN衬底的角度扫描之间没有出现偏移。在层中。通过蒙特卡罗模拟研究了整个组成范围内的氮化物三元和四元膜的这种“异常”行为。仿真表明,厚度,应变晶格畸变的大小和探测梁的能量是控制转向影响的关键参数。针对典型的2 MeVα粒子束,对应于转向电势的不同强度,建立了三个成分/应变区域,其中通过离子通道进行的应变测量是(a)正确的,(b)可能但需要校正的,并且(c)否可能由于转向效果。

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