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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Electrical and optical properties of Sb-doped BaSnO_3 epitaxial films grown by pulsed laser deposition
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Electrical and optical properties of Sb-doped BaSnO_3 epitaxial films grown by pulsed laser deposition

机译：脉冲激光沉积生长掺Sb的BaSnO_3外延薄膜的电学和光学性质

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摘要

In this paper we report the structural, electrical and optical properties of epitaxial Ba(Sb_xSn_(1-x))O_3 (x = 0-0.30) (BSSO) films grown on SrTiO_3(0 01) substrates by the pulsed laser deposition method. The investigation reveals that the transport and optical characteristics of BSSO films depend very sensitively on the Sb-doping content. Temperature-dependent resistivity measurements show that at low Sb contents (x = 0.03, 0.07) the metal-semiconductor transition occurs at 150 K and 80 K, respectively, and the semiconductor behaviour appears in high doped (x = 0.15, 0.30) films. The transmittance decreases significantly from about 80% to nearly zero in the visible region and the optical band gap shifts from 3.48 to 4.0 eV with increasing Sb content in the films. The lowest room-temperature resistivity of 2.43 mΩ cm with carrier density and mobility of 1.65×10 ~(21) cm~(-3) and 1.75 cm~2 V~(-1) s ~(-1) was obtained in the films with doping at x = 0.07. By employing them as bottom electrodes we have fabricated transparent Pb(Zr _(0.52)Ti_(0.48))O_3 ferroelectric capacitors showing square polarization-electric field hysteresis loops, indicating that these perovskite-type BSSO films at low doping can be potentially used in transparent devices especially based on all-perovskite heterostructures.
机译：在本文中，我们报告了通过脉冲激光沉积方法在SrTiO_3（0 01）衬底上生长的外延Ba（Sb_xSn_（1-x））O_3（x = 0-0.30）（BSSO）薄膜的结构，电学和光学性质。研究表明，BSSO薄膜的传输和光学特性非常敏感地取决于Sb掺杂含量。与温度相关的电阻率测量结果表明，在低Sb含量（x = 0.03，0.07）时，金属-半导体跃迁分别在150 K和80 K处发生，并且半导体行为出现在高掺杂（x = 0.15，0.30）薄膜中。随着薄膜中Sb含量的增加，可见光区域的透射率从大约80％显着降低到几乎为零，并且光学带隙从3.48变为4.0 eV。在室温下获得的最低室温电阻率为2.43mΩcm，载流子密度和迁移率为1.65×10〜（21）cm〜（-3）和1.75 cm〜2 V〜（-1）s〜（-1）。在x = 0.07处掺杂的薄膜。通过将它们用作底部电极，我们制备了具有方形极化电场滞后回线的透明Pb（Zr _（0.52）Ti_（0.48））O_3铁电电容器，表明这些低掺杂的钙钛矿型BSSO薄膜可潜在地用于透明器件，特别是基于全钙钛矿异质结构的器件。

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