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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Dielectric relaxation and magnetic properties of Cr doped GaFeO_3
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Dielectric relaxation and magnetic properties of Cr doped GaFeO_3

机译：Cr掺杂GaFeO_3的介电弛豫和磁性能

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摘要

Polycrystalline GaFe_(1-x)Cr_xO_3 (x = 0.05, 0.1 and 0.15) samples were prepared by solid state reaction. The monophasic compounds crystallize in the orthorhombic space group Pc2_1n and the unit cell volume decreases with increasing Cr content. The saturated magnetization and magnetic transition temperature of the ceramics decrease due to the dilution of the magnetic interaction with Cr concentration. The dielectric properties were investigated from 133 to 353 K at various frequencies (100-10~7 Hz). Whereas the dielectric constant decreases with Cr content an increase in dielectric loss tangent was observed. The activation energies of the compounds (calculated both from loss and modulus spectrum) are the same and have values ～0.22 eV and 0.27 eV for Cr = 10% and 15%, respectively, and hence the relaxation process may be attributed to the same type of charge carrier. A separation of the grain and grain boundary properties has been achieved using an equivalent circuit model. The capacitance and resistances associated with the grain boundary were found to be higher than those associated with grain.
机译：通过固相反应制备多晶GaFe_（1-x）Cr_xO_3（x = 0.05、0.1和0.15）样品。单相化合物在正交晶空间群Pc2_1n中结晶，单位晶胞体积随Cr含量的增加而减小。陶瓷的饱和磁化强度和磁转变温度由于与Cr浓度的磁相互作用的稀释而降低。在各种频率（100-10〜7 Hz）下，研究了介电常数从133至353K。介电常数随Cr含量的增加而降低，但观察到介电损耗角正切的增加。化合物的活化能（根据损耗和模量谱计算）相同，并且对于Cr = 10％和15％时，其活化能分别为〜0.22 eV和0.27 eV，因此弛豫过程可能归因于同一类型的电荷载体。使用等效电路模型已经实现了晶粒和晶界特性的分离。发现与晶界相关的电容和电阻高于与晶界相关的电容和电阻。

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