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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures
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Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures

机译：AlxGa1-xN / AlN / GaN异质结构在二维电子气中的散射时间

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摘要

Low-field Hall and Shubnikov-de Haas (SdH) measurements were performed on two-dimensional electron gas of Al0.24Ga0.76N/GaN and Al0.24Ga0.76N/AlN/GaN heterostructures at a low temperature. A dramatic improvement in electron mobility is observed in Al0.24Ga0.76N/AlN/GaN heterostructures with 1 and 2 nm thick AlN interlayers. A further increase in the AlN thickness degrades the transport behaviour. Transport and quantum scattering times were derived from the corresponding Hall mobility and the oscillatory part of the SdH signal. The ratio of the transport scattering time and the quantum scattering time increases from 3.87 in the heterostructure without the AlN interlayer to 14.34 with the 1 nm AlN interlayer and to 12.45 with the 2 nm AlN interlayer. A modified scattering calculation due to charged dislocation with a finite length suggests that dislocation related long-range scattering event tends to dominate both transport and quantum scattering times when a thin AlN interlayer is introduced.
机译：在低温下对Al0.24Ga0.76N / GaN和Al0.24Ga0.76N / AlN / GaN异质结构的二维电子气进行了低场霍尔和Shubnikov-de Haas（SdH）测量。在具有1和2 nm厚的AlN中间层的Al0.24Ga0.76N / AlN / GaN异质结构中，观察到了电子迁移率的显着改善。 AlN厚度的进一步增加会降低运输性能。传输和量子散射时间是从相应的霍尔迁移率和SdH信号的振荡部分得出的。传输散射时间与量子散射时间之比从无AlN中间层的异质结构中的3.87增加到具有1 nm AlN中间层的14.34和具有2 nm AlN中间层的12.45。由有限长度的带电位错引起的改进的散射计算表明，当引入薄AlN中间层时，与位错相关的长距离散射事件往往会主导着传输和量子散射时间。

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