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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Molecular beam allotaxy: a new approach to epitaxial heterostructures [Review]
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Molecular beam allotaxy: a new approach to epitaxial heterostructures [Review]

机译：分子束同种疗法：外延异质结构的一种新方法[综述]

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The present status of a new epitaxial growth method, named molecular beam allotaxy (MBA), is reviewed. The method allows one to grow single-crystalline heterostructures in a new way; that is, the desired layer forms during annealing of a precipitate layer. The precipitates are embedded within a single-crystalline matrix, grown by molecular beam epitaxy. The key point is that the epitaxial growth of the matrix persists from the substrate through the spacings between the inclusions to the overlayer. The precipitates coarsen and coalesce into a uniform layer during a subsequent high-temperature treatment, the second processing step. We discuss the present theoretical model of the layer formation during annealing which is based on inhomogeneous Ostwald ripening and particle coalescence. We place particular emphasis on the growth of precipitates in single-crystalline silicon, since MBA is based on precipitate growth and these nanoparticles exhibit interesting phenomena, such as self-ordering. We discuss the influence of the growth parameters on the layer quality and provide optimized growth and annealing parameters. MBA has been used so far mainly for the growth of epitaxial silicide heterostructures. The metallic disilicide CoSi2 on Si(100) serves as a model system because of its interesting material properties and its potential for microelectronic and optoelectronic applications. The structural and electrical properties of the obtained epitaxial Si/CoSi2/Si(100) heterostructures are reviewed. We also discuss the growth of a ternary silicide, Co1-gammaPd gamma Si-2, showing that MBA can be applied also for ternary compounds. We see a great potential in the semiconducting silicides beta-FeSi2 and RU2Si3, which can be grown by MBA. As a further test of the MBA method we investigated the growth of a buried SiOx layer in Si(100). The use of epitaxial silicides as compliant substrates and as building blocks for new microelectronic and optoelectronic devices is briefly reviewed. [References: 99]
机译：审查了一种新的外延生长方法，称为分子束同素异位反应（MBA）的现状。该方法允许以一种新的方式生长单晶异质结构。即，在析出层的退火过程中形成期望的层。沉淀物嵌入单晶基质中，通过分子束外延生长。关键点在于，基质的外延生长从基底开始，一直持续到夹杂物与上层之间的距离。在随后的高温处理（第二处理步骤）中，沉淀物变粗并聚结成均匀的层。我们讨论了基于不均匀的奥斯特瓦尔德熟化和颗粒聚结的退火过程中层形成的当前理论模型。我们特别强调单晶硅中沉淀物的生长，因为MBA基于沉淀物的生长，并且这些纳米粒子表现出有趣的现象，例如自排序。我们讨论了生长参数对层质量的影响，并提供了优化的生长和退火参数。迄今为止，MBA主要用于外延硅化物异质结构的生长。 Si（100）上的金属二硅化物CoSi2可以用作模型系统，因为它具有令人感兴趣的材料特性以及其在微电子和光电应用中的潜力。审查了获得的外延Si / CoSi2 / Si（100）异质结构的结构和电性能。我们还讨论了三元硅化物Co1-gammaPdγSi-2的生长，表明MBA也可用于三元化合物。我们认为，可以由MBA生产的半导体硅化物β-FeSi2和RU2Si3具有巨大的潜力。作为MBA方法的进一步测试，我们研究了Si（100）中SiOx埋层的生长。简要回顾了外延硅化物作为顺应性衬底以及新型微电子和光电子器件的基础材料的使用。 [参考：99]

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