Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra

Lu W.; Prasad K.; Ng GI.; Lindstrom P.; Lee JH.

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Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra

机译：室温光致发光光谱法无损测定假晶AlGaAs / InGaAs / GaAs高电子迁移率晶体管结构中的薄层载流子密度

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This paper describes a nondestructive method to determine the sheet carrier density of pseudomorphic high electron mobility transistor structures by fitting the room-temperature photoluminescence (PL) spectra. The sheet carrier densities determined were in sufficiently good agreement with values determined by Hall measurements for different samples with different mole fractions, delta-doping densities and well widths. For single-doped AlGaAs/InGaAs quantum wells, the dominant emission is the transitions from the first electron subband to the first heavy hole subband, from the first electron subband to the second heavy hole subband, and from the second electron subband to the first heavy hole subband. [References: 11]

机译：本文介绍了一种通过拟合室温光致发光（PL）光谱来确定拟态高电子迁移率晶体管结构的薄层载流子密度的无损方法。对于具有不同摩尔分数，δ掺杂密度和阱宽度的不同样品，所确定的薄片载体密度与通过霍尔测量所确定的值足够好地一致。对于单掺杂AlGaAs / InGaAs量子阱，主要发射是从第一电子子带到第一重空穴子带，从第一电子子带到第二重空穴子带以及从第二电子子带到第一重子离子的跃迁。孔子带。 [参考：11]

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |1998年第2期|共6页
作者
Lu W.; Prasad K.; Ng GI.; Lindstrom P.; Lee JH.;
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正文语种 eng
中图分类应用物理学;
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Doped quantum-wells; Hemts;

机译：掺杂量子阱;赫姆茨;

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1. Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra [J] . Lu W., Prasad K., Ng GI., Journal of Physics, D. Applied Physics: A Europhysics Journal . 1998,第2期

机译：室温光致发光光谱法无损测定假晶AlGaAs / InGaAs / GaAs高电子迁移率晶体管结构中的薄层载流子密度
2. Optical studies of two-dimensional electron gas in an InGaAs/AlGaAs pseudomorphic high electron mobility transistor structure [J] . Lin DY, Wu MC, Lin HJ, Physica, E. Low-dimensional systems & nanostructures . 2008,第5期

机译：InGaAs / AlGaAs拟晶高电子迁移率晶体管结构中二维电子气的光学研究
3. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures [J] . Egorov A.Y., Gladyshev A.G., Nikitina E.V., Semiconductors . 2010,第7期

机译：双脉冲掺杂InGaAs / AlGaAs / GaAs伪形高电子迁移率晶体管异质结构
4. Application of Schottky Bulk-Layer Design on Double-Heterojunction Pseudomorphic AlGaAs/InGaAs/AlGaAs High Electron Mobility Transistors (DH-HEMTs) [C] . Meng-Kai Hsu, Jung-Hui Tsai, Shao-Yen Chiu, International Conference on Multifunctional Materials and Structures . 2008

机译：Schottky Bulk层设计在双异质结假形Algaas / Ingaas / Algaas高电子移动晶体管（DH-HEMTS）中的应用
5. Breakdown behavior and optimization of AlGaAs/InGaAs pseudomorphic high electron mobility transistors. [D] . Palma, John Francis. 2011

机译：AlGaAs / InGaAs伪晶高电子迁移率晶体管的击穿行为和优化。
6. Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells [O] . Jinling Yu, Shuying Cheng, Yunfeng Lai, 2014

机译：InGaAs / GaAs / AlGaAs阶跃量子阱中带间激发的Rashba型和Dresselhaus型圆形光电流效应引起的自旋光电流谱
7. Pseudomorphic AlGaAs/InGaAs /GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz [O] . Jin-Hee Lee Hyung-Sup, Pseudomorphic Algaas/ingaas /gaas High 2007

机译：假晶alGaas / InGaas / Gaas高电子迁移率晶体管，18 GHz时具有0.41 dB的超低噪声性能
8. Electronic Properties of Pseudomorphic InGaAs/AlGaAs (ON GaAs) and InGaAs/InAlAs (On InP) MODFET Structures [R] . Jaffe, M., Sekiguchi, Y., East, J., 1988

机译：假晶InGaas / alGaas（ON Gaas）和InGaas / Inalas（Inp）mODFET结构的电子特性

Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra

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