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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >The growth and properties of single crystals of GaInTe2, a ternary chalcogenide semiconductor
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The growth and properties of single crystals of GaInTe2, a ternary chalcogenide semiconductor

机译:三族硫族化物半导体GaInTe2单晶的生长和性能

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Single crystals of GaInTe2 were grown from a melt and characterized by various experimental techniques, such as x-ray diffraction, x-ray photoelectron spectroscopy (XPS), and electrical and photoluminescence (PL) measurements. Our investigation evaluated important parameters of this challenging material. In particular, we studied here for the first time the electronic structure, the excitonic effects and the impurity bound states of GaInTe2, by means of XPS and by analysing dependences on the temperature and the excitation intensity of the PL spectra. [References: 20]
机译:GaInTe2单晶从熔体中生长出来,并通过各种实验技术进行表征,例如X射线衍射,X射线光电子能谱(XPS)以及电和光致发光(PL)测量。我们的调查评估了这种具有挑战性的材料的重要参数。特别是,我们在这里首次通过XPS并通过分析对温度和PL光谱激发强度的依赖性来研究GaInTe2的电子结构,激子效应和杂质结合态。 [参考:20]

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